Images à titre indicatif uniquement
EPC2101ENGRT
+NomenclatureGAN TRANS ASYMMETRICAL HALF BRID
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FabricantDisparaître moulage
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Pièce fabricant #EPC2101ENGRT
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Fiche technique EPC2101ENGRT DataSheet
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Package Die
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En stock2558
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | EPC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | eGaN® |
| Part Status | Discontinued at Digi-Key |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain(Id) @ 25°C | 9.5A, 38A |
| Rds On(Max) @ Id Vgs | 11.5mOhm @ 20A, 5V |
| Vgs(th)(Max) @ Id | 2.5V @ 2mA |
| Gate Charge(Qg)(Max) @ Vgs | 2.7nC @ 5V |
| Input Capacitance(Ciss)(Max) @ Vds | 300pF @ 30V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
