Images à titre indicatif uniquement
DXTN10060DFJBQ-7
+NomenclatureTRANS NPN 60V 4A 3DFN
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FabricantLa société diodes
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Pièce fabricant #DXTN10060DFJBQ-7
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Package UDFN-3
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En stock7523
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | Diodes Incorporated |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 4 A |
| Voltage - Collector Emitter Breakdown(Max) | 60 V |
| Vce Saturation(Max) @ Ib Ic | 320mV @ 200mA, 4A |
| Current - Collector Cutoff(Max) | 100nA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 340 @ 200mA, 2V |
| Power - Max | 1.8 W |
| Frequency - Transition | 125MHz |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
Présentation
Description
A typical introduction for such devices would note:
- It provides efficient on-state conduction with a specified Vds (drain‑to‑source voltage) and Id (continuous current).
- It has a defined Rds(on) (or equivalent on‑state resistance) and fast switching speeds.
- It includes protections such as gate threshold behavior, body diode considerations, and thermal/power limits.
- It’s offered in a power package (surface-mount or through-hole) and used in applications like DC‑DC converters, motor drivers, buck/boost converters, power supplies, and load switches.
For an accurate, detailed intro, please share the manufacturer or the datasheet, or confirm the exact type (MOSFET vs IGBT) and its rating.
