DSEI30-12A

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DSEI30-12A

+Nomenclature

DIODE GEN PURP 1.2KV 26A TO247AD

  • FabricantLa société ixys

  • Pièce fabricant #DSEI30-12A

  • Package TO-247-2

  • En stock3846

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Spécifications

Attribut Valeur
Package / Case Tube
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified(Io) 26A
Voltage - Forward (Vf) (Max) @ If 2.55 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 60 ns
Current - Reverse Leakage @ Vr 750 µA @ 1200 V
Mounting Type Through Hole
Supplier Device Package TO-247AD

Présentation

Description

The DSEI30-12A is a 30A, 1200V dual silicon carbide (SiC) Schottky diode module designed for high-efficiency power electronics applications. It features low forward voltage drop, fast switching speeds, and minimal reverse recovery losses, making it ideal for high-frequency, high-temperature environments like EV chargers, solar inverters, and industrial power supplies.
Key benefits:
- High current (30A) and voltage (1200V) ratings
- SiC technology for reduced conduction/switching losses
- Low thermal resistance for improved heat dissipation
- Compact module with easy integration
Suitable for bridgeless PFC, DC-DC converters, and other demanding circuits where efficiency and reliability are critical.

Equivalent

The DSEI30-12A is a dual Schottky diode module. Equivalent or similar products include:
- STMicroelectronics: STPS30H12CT
- Vishay: VS-30CTQ12
- ON Semiconductor: MBR30H12CTG
- Infineon: IDW30G12C
These alternatives offer comparable specifications (30A, 120V) and Schottky diode functionality. Always verify datasheets for exact compatibility.

Package

The DSEI30-12A is a TO-247AC package type. This is a widely used, high-power semiconductor package with three leads, designed for efficient heat dissipation. It is suitable for applications like rectifiers, inverters, and power supplies. The TO-247AC variant typically includes an isolated mounting hole for better thermal management.