DMN53D0LQ-7

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DMN53D0LQ-7

+Nomenclature

MOSFET N-CH 50V 500MA SOT23

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Spécifications

Attribut Valeur
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 46 pF @ 25 V
Power Dissipation (Max) 370mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number DMN53

Présentation

Description

DMN53D0LQ-7 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power management applications. It features low on-resistance, enabling efficient switching and minimizing power loss, making it suitable for use in converters, inverters, and other electronic circuits.
Key specifications typically include a breakdown voltage, current rating, and gate threshold voltage, which define its operational limits. The device is often packaged in a compact format to facilitate integration into densely populated circuits.
DMN53D0LQ-7 is particularly valued in applications where space and energy efficiency are critical, such as in consumer electronics, automotive systems, and industrial automation. Its reliability, thermal performance, and fast switching capabilities contribute to improved overall system efficiency and longevity.
For designers, understanding the characteristics of DMN53D0LQ-7 allows for optimized circuit designs that leverage its strengths while ensuring compatibility with other components within the system.

Equivalent

The DMN53D0LQ-7 is a dual n-channel MOSFET. Equivalent products include the BSS138, BS170, and 2N7000, depending on the specific application requirements like voltage and current ratings. For direct replacements, check specifications such as RDS(on), VDS, and package type to ensure compatibility. Always refer to the manufacturer's datasheets for detailed comparisons.

Features

The DMN53D0LQ-7 is a dual N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: Supports high-voltage operations with a maximum drain-source voltage (VDS) of 30V.
2. Current Rating: Capable of handling continuous drain currents up to 20A, making it suitable for high-power applications.
3. On-Resistance: Offers low on-resistance (RDS(on)), typically around 12 mΩ, which enhances efficiency by minimizing power loss during operation.
4. Fast Switching: Designed for rapid switching capabilities, ideal for applications requiring quick turn-on and turn-off times.
5. Thermal Performance: Comes in a compact SO-8 package, promoting effective heat dissipation and efficient thermal management.
6. Applications: Commonly used in DC-DC converters, power management systems, and motor control circuits.
These features make the DMN53D0LQ-7 a versatile choice for modern electronic designs requiring reliable and efficient power switching solutions.

Manufacturer

The DMN53D0LQ-7 is manufactured by ON Semiconductor Corporation, a global supplier of semiconductor solutions. ON Semiconductor is known for providing a wide range of products, including analog, digital, and mixed-signal devices, as well as power management and logic products. The company serves various markets, including automotive, industrial, communications, and consumer electronics.
Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor has grown through strategic acquisitions and investments in research and development. The company emphasizes innovation and sustainability in its operations, aiming to deliver high-performance products that meet the evolving needs of its customers. ON Semiconductor is publicly traded and is recognized for its commitment to advancing technology and providing efficient, reliable semiconductor solutions.

Application

The DMN53D0LQ-7 is a dual N-channel MOSFET designed for various applications, including power management, switching power supplies, and low-side switching in automotive and industrial systems. Its features make it suitable for applications requiring high efficiency and low on-resistance, such as motor drives, DC-DC converters, and lighting control. Additionally, it can be used in battery management systems and renewable energy systems, optimizing energy conversion and enhancing overall performance in electronic circuits.

Package

The DMN53D0LQ-7 is packaged in a SOT-23 (Small Outline Transistor) form factor. This compact surface-mount package is commonly used for discrete semiconductor devices, providing efficient thermal performance and space-saving design for electronic circuits.

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