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DMN2056U-7
+NomenclatureMOSFET N-CHANNEL 20V 4A SOT23-3
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FabricantLa société diodes
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Pièce fabricant #DMN2056U-7
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Fiche technique DMN2056U-7 DataSheet
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Package SOT23-3
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En stock4781
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Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 4A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.5V, 4.5V |
| RdsOn(Max)@IdVgs | 38mOhm @ 3.6A, 4.5V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 4.3 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 339 pF @ 10 V |
| PowerDissipation(Max) | 940mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 |
Présentation
Description
DMN2056U-7 could be a course focused on management, decision-making, or a related field, given the notation "DMN." The course might cover foundational concepts in decision-making, providing students with skills to analyze, evaluate, and improve business processes or strategic initiatives. The "2056" might indicate a particular code used by the institution for course identification, and "U-7" might signify a section, level, or version of the course.
Students can expect to engage with theoretical and practical components, learning about frameworks and tools used in decision-making processes. The course might include case studies, group projects, and discussions to enhance practical understanding. Assignments and assessments could involve applying concepts to real-world scenarios to develop critical thinking and problem-solving skills. For specific details, one would need to refer to the course syllabus or contact the academic institution offering it.
Equivalent
Features
1. Low On-Resistance: It offers low R_DS(on) values, which enhance efficiency by reducing power loss during operation.
2. High Current Capability: This MOSFET can handle significant current, making it suitable for power-intensive applications.
3. Compact Package: Available in a compact package, it is ideal for space-constrained designs.
4. Fast Switching Speed: The DMN2056U-7 supports rapid switching, improving performance in high-frequency applications.
5. Thermal Efficiency: It features good thermal performance, helping to maintain reliability under high-power conditions.
6. Reverse Polarity Protection: Provides protection against reverse voltage, increasing device durability.
7. RoHS Compliant: The device adheres to environmental standards and is free from hazardous substances.
These features make the DMN2056U-7 suitable for a range of applications, including DC-DC converters, load switches, and motor drives. Always refer to the specific datasheet for detailed electrical characteristics and ratings.
Pinout
1. Gate (G): This pin is used to control the conductivity between the drain and source. Applying voltage here allows current to flow between the other two pins.
2. Drain (D): The drain is where the current flows out of the transistor. It is connected to the load in typical applications.
3. Source (S): The source is where the current enters into the transistor. It is typically connected to ground or the negative supply in a circuit.
This MOSFET is characterized by low on-resistance and is designed for low-level DC applications.
Manufacturer
Application
1. Switching Circuits: Ideal for use in load switching and power management due to its fast switching speed.
2. DC-DC Converters: Utilized in power conversion applications, including step-up and step-down converters.
3. Battery Management: Employed in battery protection circuits and charge control systems.
4. Consumer Electronics: Used in devices such as laptops, tablets, and smartphones for efficient power management.
5. Automotive Systems: Applied in automotive electronics for controlling actuators and managing power distribution.
These features make it suitable for compact, efficient, and high-performance electronic designs.