DMN10H220LE-13

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DMN10H220LE-13

+Nomenclature

MOSFET N-CH 100V 2.3A SOT223

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Spécifications

Attribut Valeur
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 2.3A (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 220mOhm @ 1.6A, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 8.3 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 401 pF @ 25 V
Power Dissipation (Max) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223-3

Présentation

Description

The DMN10H220LE-13 is a high-performance N-channel MOSFET designed for power management applications. Key features include:
- Voltage Rating: 100V
- Current Rating: 10A (continuous)
- Low On-Resistance (RDS(on)): 220mΩ (max)
- Fast Switching: Optimized for efficiency in DC-DC converters, motor control, and load switching.
- Package: TO-252 (DPAK), suitable for surface-mount applications.
This MOSFET is ideal for automotive, industrial, and consumer electronics where low power loss and compact design are critical. Its low gate charge ensures minimal switching losses, enhancing overall system efficiency.
For detailed specifications, refer to the datasheet.

Equivalent

The DMN10H220LE-13 is a MOSFET produced by Diodes Incorporated. Equivalent products may include MOSFETs with similar specifications, such as V_DS, I_D, R_DS(on), and package type. Possible equivalents could be the ON Semiconductor NTD3055-150, Infineon IRLML6344TRPBF, and Vishay Si2302DS, depending on specific application requirements. Always verify specifications and compatibility before selecting an equivalent.

Features

The DMN10H220LE-13 is a 100V N-channel MOSFET with the following key features:
- Voltage Rating: 100V
- Current Rating: 10A (continuous)
- Low On-Resistance (RDS(on)): 22mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-efficiency applications
- Low Gate Charge (Qg): Enhances switching performance
- Logic-Level Gate Drive: Compatible with 5V drive signals
- Package: TO-252 (DPAK) for efficient thermal dissipation
- Applications: Power management, DC-DC converters, motor control
Compact, efficient, and suitable for high-performance power circuits.

Pinout

The DMN10H220LE-13 is a MOSFET transistor manufactured by Diodes Incorporated. It is primarily used for switching applications. This MOSFET is a single N-channel device housed in a standard SOT-23 package, which typically has a 3-pin configuration.
The pin functions for the DMN10H220LE-13 in a SOT-23 package are generally as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying voltage here allows current to flow between the drain and source.
2. Source (S): This pin is the source of the charge carriers (electrons for an N-channel MOSFET). It's typically connected to ground in many applications.
3. Drain (D): This pin is where the controlled current flows out from the MOSFET. It's typically connected to the load.
This MOSFET is designed for low voltage applications with a maximum drain-source voltage of around 100V and has a continuous drain current capacity suited for low power applications.

Manufacturer

The DMN10H220LE-13 is manufactured by Diodes Incorporated. Diodes Incorporated is a global company that specializes in the design, manufacture, and supply of a broad range of semiconductor products. Their product portfolio includes discrete, analog, and mixed-signal products, which serve various applications in the consumer electronics, computing, communications, industrial, and automotive markets. The company is known for providing high-quality solutions that are energy-efficient and cost-effective, catering to the demands of modern electronic devices.

Application

The DMN10H220LE-13 is a MOSFET used primarily in power management applications. It is suitable for use in DC-DC converters, load switches, and battery protection circuits due to its low on-resistance and high efficiency. Common application areas include consumer electronics, automotive electronics, and portable devices where efficient power conversion and management are crucial. Its small form factor makes it ideal for space-constrained applications.

Package

The DMN10H220LE-13 is a MOSFET transistor housed in a DFN2020-3 package, which is a small, flat leadless package designed for surface mount applications.

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