DMG6602SVT-7

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DMG6602SVT-7

+Nomenclature

MOSFET N/P-CH 30V TSOT23-6

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Spécifications

Attribut Valeur
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Not For New Designs
FET Type N and P-Channel
FET Feature Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain(Id) @ 25°C 3.4A, 2.8A
Rds On(Max) @ Id Vgs 60mOhm @ 3.1A, 10V
Vgs(th)(Max) @ Id 2.3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 13nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 400pF @ 15V
Power - Max 840mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

Présentation

Description

The DMG6602SVT-7 is a high-performance RF coaxial switch designed for microwave and millimeter-wave applications. Key features include:
- Frequency Range: DC to 67 GHz
- Low Insertion Loss: <1.5 dB (typical)
- High Isolation: >60 dB (typical)
- Fast Switching Speed: <10 ms
- Compact & Rugged: Suitable for test systems, aerospace, and defense
It supports SPDT (Single Pole Double Throw) switching via TTL or USB control, ensuring reliable signal routing in 5G, SATCOM, and radar systems.
For detailed specs, refer to the datasheet or manufacturer documentation.

Equivalent

The DMG6602SVT-7 is a dual N-channel MOSFET. Equivalent or similar products include:
- SiA936DJ-T1-GE3 (Vishay)
- DMN2019LSN-7 (Diodes Inc.)
- BSS138DW-7 (Diodes Inc.)
- 2N7002DW (ON Semiconductor)
These alternatives offer comparable specifications for switching applications. Always verify pin compatibility and electrical characteristics for your specific design.

Features

The DMG6602SVT-7 is a high-performance N-channel MOSFET with the following key features:
- Voltage Rating: 60V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): 7.0 mΩ (max) @ VGS = 10V
- Fast Switching: Optimized for high-speed applications
- Gate Charge (Qg): 48nC (typical) for efficient switching
- Avalanche Energy Rated: Robust against voltage spikes
- Package: TO-263-7 (D2PAK), suitable for power applications
- Low Gate Drive: Compatible with 4.5V drive (VGS(th) = 2V typical)
Ideal for DC-DC converters, motor control, and power management in automotive/industrial systems.

Pinout

The DMG6602SVT-7 is a dual N-channel MOSFET in a PowerDI 5x6 package with 8 pins (though some are internally connected).
Key Functions:
- Dual N-channel MOSFETs (two independent MOSFETs in one package).
- Low on-resistance (RDS(on)) for efficient power switching.
- High current handling (typically used in power management, DC-DC converters, and load switching).
- Logic-level gate drive (compatible with 3.3V/5V controllers).
Pinout (simplified):
- Pins 1, 3, 5, 7: Drain terminals (D1, D2).
- Pins 2, 4: Gate terminals (G1, G2).
- Pins 6, 8: Source terminals (S1, S2).
Common applications include battery protection, motor control, and power distribution.

Manufacturer

The DMG6602SVT-7 is manufactured by Diodes Incorporated, a global semiconductor company specializing in high-quality discrete, analog, and mixed-signal ICs. Founded in 1966 and headquartered in Plano, Texas, Diodes Inc. serves industries like automotive, consumer electronics, computing, and communications. The DMG6602SVT-7 is a dual N-channel MOSFET designed for power management applications, reflecting the company's focus on efficient, compact solutions. Diodes Inc. is known for innovation, reliability, and cost-effective semiconductor products.

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