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DMG3415U-7
+NomenclatureMOSFET P-CH 20V 4A SOT23-3
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FabricantLa société diodes
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Pièce fabricant #DMG3415U-7
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Package SOT-23-3
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En stock7618
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 4A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 4.5V |
| Rds On(Max) @ Id Vgs | 39mOhm @ 4A, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 9.1 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 294 pF @ 10 V |
| Power Dissipation (Max) | 900mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
Présentation
Description
The DMG3415U-7 is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient switching and amplification in electronic circuits. This component is produced by Diodes Incorporated, a company known for manufacturing discrete, analog, and mixed-signal semiconductor products.
Key features of the DMG3415U-7 include:
1. Type and Configuration: It is an N-channel MOSFET, suitable for low voltage applications.
2. Voltage and Current Ratings: It typically operates with a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of around 4.2A, making it useful in various power management applications.
3. R_DS(on): This MOSFET offers a low on-resistance, providing efficient current flow and reduced power loss.
4. Package: It is available in a miniature surface-mount package, ideal for compact and high-density designs.
5. Applications: Commonly used in DC-DC converters, load switches, and power management circuits due to its efficiency and reliability.
Overall, the DMG3415U-7 is valued in electronic design for its balance of performance and compactness.
Key features of the DMG3415U-7 include:
1. Type and Configuration: It is an N-channel MOSFET, suitable for low voltage applications.
2. Voltage and Current Ratings: It typically operates with a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of around 4.2A, making it useful in various power management applications.
3. R_DS(on): This MOSFET offers a low on-resistance, providing efficient current flow and reduced power loss.
4. Package: It is available in a miniature surface-mount package, ideal for compact and high-density designs.
5. Applications: Commonly used in DC-DC converters, load switches, and power management circuits due to its efficiency and reliability.
Overall, the DMG3415U-7 is valued in electronic design for its balance of performance and compactness.
Equivalent
The DMG3415U-7 is a P-channel MOSFET with specifications such as a maximum drain-source voltage of -30V and a continuous drain current of -4.3A. Equivalent products might include:
1. AO3401A from Alpha & Omega Semiconductor
2. SI2319DS from Vishay
3. FDN304P from ON Semiconductor
4. 2N7002P from NXP
Ensure to verify the datasheets for specific parameters like package type, Rds(on), and thermal characteristics for compatibility.
1. AO3401A from Alpha & Omega Semiconductor
2. SI2319DS from Vishay
3. FDN304P from ON Semiconductor
4. 2N7002P from NXP
Ensure to verify the datasheets for specific parameters like package type, Rds(on), and thermal characteristics for compatibility.
Features
The DMG3415U-7 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management and switching applications. Key features of this component include:
1. Type: N-Channel MOSFET, suitable for high-speed switching.
2. Voltage Rating: It operates with a drain-source voltage (V_DS) up to 30V, making it suitable for various low to mid-voltage applications.
3. Current Rating: It supports a continuous drain current (I_D) of around 4.2A, accommodating moderate power loads.
4. R_DS(on): The on-state resistance is typically low, enhancing efficiency by reducing power loss.
5. Package: Comes in a compact SOT-23 package, making it ideal for space-constrained applications.
6. Temperature Range: It operates effectively across a wide temperature range, ensuring reliability under diverse conditions.
7. Applications: Commonly used in DC-DC converters, load switches, and power management systems.
These features make the DMG3415U-7 a versatile choice for engineers looking to implement efficient switching solutions in compact form factors.
1. Type: N-Channel MOSFET, suitable for high-speed switching.
2. Voltage Rating: It operates with a drain-source voltage (V_DS) up to 30V, making it suitable for various low to mid-voltage applications.
3. Current Rating: It supports a continuous drain current (I_D) of around 4.2A, accommodating moderate power loads.
4. R_DS(on): The on-state resistance is typically low, enhancing efficiency by reducing power loss.
5. Package: Comes in a compact SOT-23 package, making it ideal for space-constrained applications.
6. Temperature Range: It operates effectively across a wide temperature range, ensuring reliability under diverse conditions.
7. Applications: Commonly used in DC-DC converters, load switches, and power management systems.
These features make the DMG3415U-7 a versatile choice for engineers looking to implement efficient switching solutions in compact form factors.
Pinout
The DMG3415U-7 is a P-channel MOSFET with a total of 3 pins. Its primary function is to act as a switch or amplifier in electronic circuits. This MOSFET is typically used for load switching applications and power management in various electronic devices.
Key features include:
- Gate (G): The control pin that modulates the conductivity between the drain and source.
- Drain (D): The pin through which the current flows from the load into the MOSFET.
- Source (S): The pin through which the current exits the MOSFET back to the ground or power supply.
This component is designed for efficient power management due to its low on-resistance and fast switching capabilities. It is packaged in a small SOT-23 format, which is suitable for surface-mount technology.
Key features include:
- Gate (G): The control pin that modulates the conductivity between the drain and source.
- Drain (D): The pin through which the current flows from the load into the MOSFET.
- Source (S): The pin through which the current exits the MOSFET back to the ground or power supply.
This component is designed for efficient power management due to its low on-resistance and fast switching capabilities. It is packaged in a small SOT-23 format, which is suitable for surface-mount technology.
Manufacturer
The DMG3415U-7 is manufactured by Diodes Incorporated. Diodes Incorporated is a semiconductor company that designs, manufactures, and supplies a broad range of discrete, analog, and mixed-signal products. Their offerings are utilized across a variety of applications, including consumer electronics, computing, communications, industrial, and automotive markets. The company is known for delivering solutions that enhance performance and provide energy-efficient solutions to meet the needs of modern electronic devices.
Application
The DMG3415U-7 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in various electronic applications due to its efficiency and reliability. Its primary application areas include power management systems, where it controls voltage and current levels efficiently. It's also used in DC-DC converters, load switches, and power supply circuits in consumer electronics like smartphones, laptops, and tablets due to its compact size and high performance. Additionally, it's suitable for automotive electronics, industrial equipment, and LED lighting systems, offering high-speed switching and low on-resistance, contributing to energy efficiency and enhanced performance in various devices.
Package
The DMG3415U-7 is a MOSFET in a surface-mount package. Specifically, it is housed in a SOT-23 package, which is a small-outline, surface-mounted package commonly used for discrete components like transistors and diodes.
