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DMG2305UX-13
+NomenclatureMOSFET P-CH 20V 4.2A SOT23
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FabricantLa société diodes
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Pièce fabricant #DMG2305UX-13
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Fiche technique DMG2305UX-13 DataSheet
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Package SOT-23-3
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En stock5934
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Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 4.2A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.8V, 4.5V |
| RdsOn(Max)@IdVgs | 52mOhm @ 4.2A, 4.5V |
| Vgs(th)(Max)@Id | 900mV @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 10.2 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 808 pF @ 15 V |
| PowerDissipation(Max) | 1.4W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 |
Présentation
Description
Key specifications include a drain-source voltage (V_DS) of -30V and a continuous drain current (I_D) of up to -3.2A. The device is optimized for fast switching, improving efficiency in circuits that require quick response times. The DMG2305UX-13 is often used in battery-powered devices due to its low gate charge and efficient power handling capabilities.
This component is crafted to offer robustness and reliability, even within challenging electronic environments, ensuring consistent performance. Designers favor it for its balance of efficiency, size, and performance, making it a versatile choice in modern electronic designs.
Equivalent
1. BS250P from Infineon
2. SI2301 from Vishay
3. AO3407A from Alpha & Omega Semiconductor
4. PMV20XNEA from Nexperia
5. FDMA1027PZ from ON Semiconductor
When selecting an equivalent, verify the voltage, current ratings, package type, and other specific electrical characteristics to ensure compatibility with your application.
Features
1. Low On-Resistance: It offers a low on-resistance, facilitating efficient current flow with minimal power loss.
2. High-Speed Switching: The MOSFET supports fast switching, enhancing performance in high-frequency applications.
3. Compact Package: Encased in a small SOT-23 package, it is suitable for space-constrained designs.
4. Thermal Performance: It provides effective thermal management, critical for maintaining performance and reliability under load.
5. Voltage and Current Ratings: Typically features a maximum drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) rating suitable for low to medium power applications.
6. RoHS Compliance: Environmentally friendly design adhering to Restriction of Hazardous Substances Directive standards.
7. Wide Applications: Ideal for use in DC-DC converters, battery-powered devices, and load switching.
These attributes make the DMG2305UX-13 a versatile component for enhancing energy efficiency and reliability in electronic circuits.
Pinout
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, you can switch the device on or off.
2. Source (S): This is the source terminal of the P-channel MOSFET, usually connected to the higher voltage in the circuit.
3. Drain (D): The drain is the terminal through which the current flows when the MOSFET is turned on. It is typically connected to the load in a circuit.
The DMG2305UX-13 is used for switching applications and can handle relatively low power compared to larger MOSFET packages. It is ideal for applications requiring a compact form factor and efficient switching capabilities.