DGD2190MS8-13

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DGD2190MS8-13

+Nomenclature

IC GATE DRV HALF-BRIDGE 8SO 2.5K

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Spécifications

Attribut Valeur
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
DrivenConfiguration Half-Bridge
ChannelType Independent
NumberofDrivers 2
GateType IGBT, N-Channel MOSFET
Voltage-Supply 10V ~ 20V
LogicVoltage-VILVIH 0.8V, 2.5V
Current-PeakOutput(SourceSink) 4.5A, 4.5A
InputType Non-Inverting
HighSideVoltage-Max(Bootstrap) 600 V
Rise/FallTime(Typ) 25ns, 20ns
OperatingTemperature -40°C ~ 125°C (TA)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Présentation

Description

The "Introduction to DGD2190MS8-13" likely refers to a course, module, or product model number, but without specific context, it's challenging to provide a detailed explanation. If it's a course, it might cover fundamental concepts related to a particular subject area, possibly within digital graphics, design, or a specialized technical field, given the alphanumeric coding that resembles academic course or product identifiers. If "DGD2190MS8-13" is a model number, it could pertain to a specific device, component, or software version, possibly within a technical or engineering discipline.
For academic courses, an introduction typically involves a broad overview of basic concepts, foundational theories, key terminology, and introductory practical applications within the subject. For products, an introduction might cover its specifications, key features, intended use cases, and benefits. To receive a more tailored explanation, providing additional context about the subject area, industry, or nature of "DGD2190MS8-13" would be helpful.

Equivalent

The DGD2190MS8-13 is a gate driver IC. Equivalent products include:
1. IR2110 from Infineon Technologies - a high-voltage, high-speed power MOSFET and IGBT driver.
2. UCC27714 from Texas Instruments - a high-side and low-side gate driver.
3. FAN7390 from ON Semiconductor - a half-bridge gate driver.
Ensure compatibility by checking the specific requirements such as voltage, current ratings, and package type before substituting.

Features

The DGD2190MS8-13 is a high-performance gate driver IC designed for driving power MOSFETs and IGBTs. Key features include:
1. Dual Output Channels: It provides two low-side gate drivers, allowing for efficient control of two power transistors simultaneously.
2. Bootstrap Operation: The device supports bootstrap operation, enabling high-side drive capability, which is crucial for driving the high-side MOSFETs in half-bridge or full-bridge configurations.
3. Undervoltage Lockout (UVLO): It ensures safe operation by preventing the gate driver from turning on if the supply voltage is below a specified threshold.
4. High-Speed Operation: Capable of driving MOSFETs and IGBTs with fast switching times, which is essential for high-frequency applications.
5. Wide Supply Voltage Range: Supports a broad range of supply voltages, enhancing versatility for different circuit requirements.
6. Protection Features: Includes built-in protection mechanisms such as over-temperature and short-circuit protection to ensure reliability and safety.
7. Compact Package: Available in a small MSOP-8 package, facilitating easy integration into compact designs.
These features make the DGD2190MS8-13 suitable for applications in power management, motor drives, and DC-DC converters.

Pinout

The DGD2190MS8-13 is a high-voltage gate driver IC that typically comes in an 8-pin SOIC package. The primary function of this IC is to drive high-side and low-side N-channel MOSFETs in a half-bridge configuration, making it suitable for various power electronics applications like motor drives and DC-DC converters. Here's a brief on its pin configuration:
1. VCC: Supply voltage for the IC.
2. HIN: High-side input.
3. LIN: Low-side input.
4. COM: Common ground reference.
5. LO: Low-side output for the low-side MOSFET.
6. VS: High-side floating supply return.
7. HO: High-side output for the high-side MOSFET.
8. VB: High-side floating supply.
The DGD2190MS8-13 is designed for robustness, providing logic input compatibility with standard TTL and CMOS levels, and supports operating voltages up to 600V. Additionally, it features undervoltage lockout protection and has a built-in dead time to prevent shoot-through.

Manufacturer

The DGD2190MS8-13 is manufactured by Diodes Incorporated. Diodes Inc. is a semiconductor manufacturer that provides a broad range of application-specific standard products within the discrete, logic, analog, and mixed-signal semiconductor markets. The company focuses on high-volume consumer electronics, computing, communications, industrial, and automotive markets. Their product portfolio includes diodes, rectifiers, transistors, MOSFETs, protection devices, functional-specific arrays, single-gate logic, amplifiers and comparators, Hall-effect and temperature sensors, LED drivers, AC-DC converters, DC-DC switching and linear voltage regulators, as well as voltage references along with special-function devices like USB power switches, load switches, voltage supervisors, and motor controllers. Diodes Incorporated emphasizes high-quality and cost-effective solutions, and has a global presence with sales, marketing, and engineering offices worldwide.

Application

The DGD2190MS8-13 is a half-bridge gate driver IC that is typically used in applications such as motor control, power supplies, DC-DC converters, and inverters. It is designed to drive high-speed power MOSFETs and IGBTs, making it suitable for use in high-efficiency power conversion systems. Its features, such as high-voltage capability and protection mechanisms, make it ideal for industrial, automotive, and consumer electronics applications where reliable and efficient power management is crucial.

Package

The DGD2190MS8-13 is a high-voltage gate driver IC typically found in an 8-lead SOIC package. This package type is suitable for surface mounting, providing a compact design ideal for power management applications.

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