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CY15B256Q-SXE
+NomenclatureIC FRAM 256KBIT SPI 8SOIC
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FabricantTechnologie Infineon
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Pièce fabricant #CY15B256Q-SXE
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Fiche technique CY15B256Q-SXE DataSheet
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En stock9064
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Spécifications
| Attribut | Valeur |
| Series | F-RAM™ |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FRAM |
| Technology | FRAM (Ferroelectric RAM) |
| Memory Size | 256Kbit |
| Memory Organization | 32K x 8 |
| Memory Interface | SPI |
| Clock Frequency | 33 MHz |
| Access Time | 9 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Base Product Number | CY15B256 |
Présentation
Description
One of the standout features of the CY15B256Q-SXE is its ability to retain data for over 100 years without a power supply, making it ideal for applications in automotive, industrial control systems, and consumer electronics where data integrity is paramount. It supports a simple interface compatible with standard SRAM, allowing for easy integration into existing designs.
Additionally, the device provides write protection options, enhancing data security. Its compact packaging and low power consumption further contribute to its suitability for embedded systems. Overall, the CY15B256Q-SXE represents an efficient solution for applications needing reliable, persistent memory.
Equivalent
Features
1. Interface: It utilizes a Quad-SPI (QSPI) interface, enabling high-speed data transfer and efficient access to stored data.
2. Operating Voltage: It operates within a voltage range of 2.7V to 3.6V, making it suitable for low-power applications.
3. Data Retention: It offers a data retention period of up to 20 years, ensuring long-term reliability.
4. Endurance: The device supports up to 100,000 program/erase cycles, ideal for applications requiring frequent updates.
5. Fast Read Performance: It boasts fast read speeds, allowing for quick data retrieval.
6. Package Options: Available in various package options, including a compact 8-pin SOIC, which facilitates easy integration into various designs.
These features make the CY15B256Q-SXE an excellent choice for embedded systems, automotive applications, and consumer electronics requiring reliable and efficient non-volatile memory solutions.
Pinout
The primary functions of the pins are as follows:
- Address Pins (A0-A14): Select the memory location.
- Data Pins (D0-D7): Serve as the input/output data bus for reading and writing data.
- Chip Enable (CE): Activates the device for operation.
- Write Enable (WE): Controls the write operation; when low, data can be written to memory.
- Output Enable (OE): Enables the output buffers for reading data.
- VCC: Supplies power to the device.
- GND: Connects to ground.
- VSSQ: Provides a reference voltage for the I/O pins.
This device offers fast read and write access times while maintaining data during power loss through its non-volatile nature.