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CSD87313DMS
+NomenclatureMOSFET 2 N-CHANNEL 30V 8WSON
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FabricantTexas Instruments
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Pièce fabricant #CSD87313DMS
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Fiche technique CSD87313DMS DataSheet
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Package WDFN-8
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En stock6204
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Spécifications
| Attribut | Valeur |
| Supplier | Texas Instruments |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) Common Drain |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Vgs(th)(Max) @ Id | 1.25V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 28nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 4290pF @ 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Présentation
Description
Pinout
- Function: Dual N-channel power MOSFET pair configured for use as high-side and low-side switches (synchronous rectifier) in DC-DC converter power stages.
Manufacturer
What kind of company: TI is an American multinational semiconductor company that designs and manufactures analog and embedded processing integrated circuits; one of the world’s largest semiconductor manufacturers.
Application
- Point-of-load regulators for PMICs (CPU/GPU VRMs)
- Laptop, desktop, and server power rails
- Telecom and data-center power modules
- Automotive 12–48 V power systems
- Industrial control and embedded power supplies
- Consumer electronics and portable devices requiring compact, efficient DC-DC regulation
In short: compact, efficient DC-DC conversion for modern electronic systems across automotive, industrial, and consumer applications.