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CSD25211W1015
+NomenclatureMOSFET P-CH 20V 3.2A 6DSBGA
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FabricantTexas Instruments
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Pièce fabricant #CSD25211W1015
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En stock913
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
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Spécifications
| Attribut | Valeur |
| Series | NexFET™ |
| Part Status | Active |
| Base Product Number | CSD25211 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.1 nC @ 4.5 V |
| Vgs (Max) | -6V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 10 V |
| Power Dissipation (Max) | 1W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-DSBGA (1x1.5) |
| Package | 6-UFBGA, DSBGA |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
