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CSD19538Q3AT
+NomenclatureMOSFET N-CH 100V 15A 8VSON
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FabricantTexas Instruments
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Pièce fabricant #CSD19538Q3AT
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En stock3727
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Spécifications
| Attribut | Valeur |
| Supplier | Texas Instruments |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 15A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 59mOhm @ 5A, 10V |
| Vgs(th)(Max)@Id | 3.8V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 4.3 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 454 pF @ 50 V |
| PowerDissipation(Max) | 2.8W (Ta), 23W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-VSONP (3x3.3) |
Présentation
Description
Introduction to CSD19538Q3AT:
- TI NexFET power MOSFET: a single N-channel enhancement-mode device designed for automotive power management.
- Q3AT denotes automotive-qualified (auto-grade) device for 12V automotive systems.
- Key use: ideal for high-efficiency DC-DC converters, particularly synchronous buck regulators, motor drives, and load-switch applications.
- Benefits: low on-resistance and low gate charge for reduced conduction and switching losses; rugged drain–source rating with good SOA and avalanche robustness; built-in fast body diode for dependable rectification.
- Packaging/thermal: compact package suitable for automotive power electronics with solid thermal performance.
- How to use: as a high- or low-side switch in switching regulators, with appropriate gate drive, gate resistors to control switching speed, and adequate heatsinking to keep junction temperature in range.
For exact electrical specs (Vds, Id, Rds(on), Qg, package type) and package recommendations, consult the TI CSD19538Q3AT datasheet and product page.
- TI NexFET power MOSFET: a single N-channel enhancement-mode device designed for automotive power management.
- Q3AT denotes automotive-qualified (auto-grade) device for 12V automotive systems.
- Key use: ideal for high-efficiency DC-DC converters, particularly synchronous buck regulators, motor drives, and load-switch applications.
- Benefits: low on-resistance and low gate charge for reduced conduction and switching losses; rugged drain–source rating with good SOA and avalanche robustness; built-in fast body diode for dependable rectification.
- Packaging/thermal: compact package suitable for automotive power electronics with solid thermal performance.
- How to use: as a high- or low-side switch in switching regulators, with appropriate gate drive, gate resistors to control switching speed, and adequate heatsinking to keep junction temperature in range.
For exact electrical specs (Vds, Id, Rds(on), Qg, package type) and package recommendations, consult the TI CSD19538Q3AT datasheet and product page.
Features
CSD19538Q3AT is a TI automotive-grade N-channel NexFET power MOSFET. Key features:
- 30 V N-channel enhancement-mode MOSFET
- Very low on-resistance (low conduction losses) with low gate charge for high-efficiency switching
- Logic-level gate drive (Vgs ~ 4.5 V suitable for low-voltage controllers)
- Low input capacitance and Crss for fast switching
- High current capability for synchronous buck, motor drive, and load-switching
- Automotive-grade, AEC-Q100 qualified, wide temperature range
- Small, thermally efficient package (8-pin/SON-like with exposed pad)
- RoHS compliant and halogen-free
Applications include DC-DC converters, point-of-load switches, and high-speed switching in automotive systems. For exact electrical values (Rds(on), Crss, Qg) and package details, refer to the TI datasheet.
- 30 V N-channel enhancement-mode MOSFET
- Very low on-resistance (low conduction losses) with low gate charge for high-efficiency switching
- Logic-level gate drive (Vgs ~ 4.5 V suitable for low-voltage controllers)
- Low input capacitance and Crss for fast switching
- High current capability for synchronous buck, motor drive, and load-switching
- Automotive-grade, AEC-Q100 qualified, wide temperature range
- Small, thermally efficient package (8-pin/SON-like with exposed pad)
- RoHS compliant and halogen-free
Applications include DC-DC converters, point-of-load switches, and high-speed switching in automotive systems. For exact electrical values (Rds(on), Crss, Qg) and package details, refer to the TI datasheet.
Pinout
- Pin count: 8 pins (8-pin package).
- Function: N-channel enhancement-mode NexFET power MOSFET (automotive grade) for switching in power-management circuits.
- Function: N-channel enhancement-mode NexFET power MOSFET (automotive grade) for switching in power-management circuits.
Manufacturer
- Manufacturer: Texas Instruments Incorporated (TI)
- Company type: American multinational semiconductor company that designs and manufactures analog and embedded processing integrated circuits; one of the world's largest semiconductor makers, headquartered in Dallas, Texas.
- Company type: American multinational semiconductor company that designs and manufactures analog and embedded processing integrated circuits; one of the world's largest semiconductor makers, headquartered in Dallas, Texas.
Application
CSD19538Q3AT is an automotive-grade NexFET N-channel power MOSFET ideal for high-efficiency 12 V/24 V automotive power electronics. Typical applications include: high-side/low-side switches in synchronous buck DC-DC converters and point-of-load regulators; load switching for automotive rails; motor/actuator drivers and pump controls; battery management and charging circuits; and power domains in infotainment, telematics, and body electronics (lighting, sensors, ECUs).
Package
VSON-8 (8-pin, 3.0 x 3.0 mm) package with exposed pad.
