Images à titre indicatif uniquement
CSD19537Q3T
+NomenclatureMOSFET N-CH 100V 50A 8VSON
-
FabricantTexas Instruments
-
Pièce fabricant #CSD19537Q3T
-
En stock5547
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Series | NexFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 3.6V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 50 V |
| Power Dissipation (Max) | 2.8W (Ta), 83W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSON-CLIP (3.3x3.3) |
| Package / Case | 8-PowerTDFN |
| Base Product Number | CSD19537Q3 |
Présentation
Description
CSD19537Q3T refers to a specific course or module, likely related to a field such as computer science, data science, or a related discipline. The "CSD" prefix typically indicates a focus on computer science or data topics, while the subsequent numbers and letters may denote the course level, term, or specific topic covered.
The course may cover foundational concepts, practical applications, or advanced techniques relevant to the subject area. Topics could include programming, data analysis, algorithms, machine learning, or software development, depending on its focus.
To get detailed information about the course objectives, structure, and prerequisites, it would be best to consult the course syllabus or academic institution’s website where it is offered.
The course may cover foundational concepts, practical applications, or advanced techniques relevant to the subject area. Topics could include programming, data analysis, algorithms, machine learning, or software development, depending on its focus.
To get detailed information about the course objectives, structure, and prerequisites, it would be best to consult the course syllabus or academic institution’s website where it is offered.
Equivalent
The CSD19537Q3T chip, a N-channel MOSFET, can be equivalent to products like the CSD19535Q3T and CSD19536Q3T, which share similar specifications. Other alternatives might include components from manufacturers like Infineon, Vishay, or STMicroelectronics that fulfill similar voltage and current ratings, typically in the same package type (SOIC-8 or similar). Always verify specific parameters like RDS(on), VDS, and maximum current ratings before substituting.
Features
The CSD19537Q3T is a high-performance N-channel MOSFET designed for various power management applications. Key features include:
1. Low RDS(on): Offers low on-state resistance, which enhances efficiency and reduces power losses.
2. High Voltage Rating: Suitable for applications requiring voltages up to 30V.
3. Fast Switching Speed: Ensures quick response times in high-frequency applications, improving overall performance.
4. Compact Package: Packaged in a Q3T form factor, it enables space-efficient designs.
5. Thermal Performance: Designed to handle high current loads while maintaining thermal stability.
6. Gate Threshold Voltage: Optimized for low-voltage drive requirements, facilitating easy integration into various circuits.
This combination of features makes the CSD19537Q3T ideal for use in DC-DC converters, power management, and motor control applications.
1. Low RDS(on): Offers low on-state resistance, which enhances efficiency and reduces power losses.
2. High Voltage Rating: Suitable for applications requiring voltages up to 30V.
3. Fast Switching Speed: Ensures quick response times in high-frequency applications, improving overall performance.
4. Compact Package: Packaged in a Q3T form factor, it enables space-efficient designs.
5. Thermal Performance: Designed to handle high current loads while maintaining thermal stability.
6. Gate Threshold Voltage: Optimized for low-voltage drive requirements, facilitating easy integration into various circuits.
This combination of features makes the CSD19537Q3T ideal for use in DC-DC converters, power management, and motor control applications.
Pinout
The CSD19537Q3T is a N-channel MOSFET from Texas Instruments designed for high-efficiency power applications. It comes in a DPAK package with a total of 5 pins. The pin functions are as follows:
1. Gate (G): Controls the MOSFET's switching operation.
2. Drain (D): The main current-carrying terminal; connects to the load.
3. Source (S): The terminal connected to ground or the lower potential in the circuit.
4. Tab (T): Typically connected to the drain for heat dissipation; serves as a thermal connection.
The device is designed for low R_DS(on) and fast switching speeds, making it suitable for applications such as DC-DC converters and power management systems.
1. Gate (G): Controls the MOSFET's switching operation.
2. Drain (D): The main current-carrying terminal; connects to the load.
3. Source (S): The terminal connected to ground or the lower potential in the circuit.
4. Tab (T): Typically connected to the drain for heat dissipation; serves as a thermal connection.
The device is designed for low R_DS(on) and fast switching speeds, making it suitable for applications such as DC-DC converters and power management systems.
Manufacturer
The CSD19537Q3T is manufactured by Texas Instruments (TI), an American technology company. Founded in 1930, Texas Instruments is known for designing and manufacturing semiconductors and various integrated circuits. The company primarily serves the electronics and technology sectors, producing components for applications such as analog and embedded processing. TI is recognized for its innovative solutions, which support a wide range of industries, including automotive, industrial, communications, and consumer electronics. The CSD19537Q3T is a power MOSFET used in various electronic applications, showcasing TI's expertise in power management solutions.
Application
The CSD19537Q3T is a high-performance MOSFET primarily used in power management applications. Its key areas include DC-DC converters, synchronous rectification, and power supplies for computing and telecommunications. It is suitable for electric vehicles, industrial systems, and renewable energy systems due to its efficiency and thermal performance. Additionally, it can be utilized in battery management systems and various consumer electronics for efficient power conversion and energy management.
Package
The CSD19537Q3T is packaged in a QFN (Quad Flat No-lead) format, specifically a 5mm x 6mm size, which provides a compact footprint and efficient thermal performance for power management applications. This package type is designed for high-density layouts and is suitable for surface mounting.
