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CSD19536KCS
+NomenclatureMOSFET N-CH 100V 150A TO220-3
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FabricantTexas Instruments
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Pièce fabricant #CSD19536KCS
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Fiche technique CSD19536KCS DataSheet
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En stock7875
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Spécifications
| Attribut | Valeur |
| Supplier | Texas Instruments |
| Package / Case | Tube |
| Series | NexFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 150A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 2.7mOhm @ 100A, 10V |
| Vgs(th)(Max) @ Id | 3.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 153 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 12000 pF @ 50 V |
| Power Dissipation (Max) | 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
Présentation
Description
The introduction to this course would likely cover the fundamental concepts and objectives of the subject matter. Students might be introduced to key theories, methodologies, tools, and techniques relevant to the field. The course could involve lectures, practical sessions, and assignments designed to provide a comprehensive understanding of the topics covered.
To fully grasp the content and requirements of CSD19536KCS, students should refer to the specific course syllabus provided by their educational institution, which would outline topics covered, learning outcomes, assessment methods, and any required textbooks or resources.
Equivalent
1. IRF540N - from Infineon Technologies.
2. FQP30N06 - from ON Semiconductor.
3. STP55NF06 - from STMicroelectronics.
4. NTD4906N - from ON Semiconductor.
These alternatives have similar specifications but ensure to verify datasheets for exact parameter matching.
Features
1. Voltage and Current Ratings: The MOSFET handles a drain-to-source voltage (V_ds) of up to 60V and supports a continuous drain current (I_d) of up to 80A.
2. Low On-Resistance: It has a low R_ds(on) (on-resistance) of approximately 2.3 mΩ, which ensures reduced power losses and improved efficiency.
3. Thermal Performance: It is housed in a TO-220 package, which provides good thermal performance and reliability in power applications.
4. Gate Charge: With a low gate charge, it facilitates faster switching speeds and reduced switching losses.
5. Applications: Suitable for synchronous rectification, motor control, and DC-DC converters, among other power management applications.
6. Operating Temperature: It functions effectively within a broad temperature range, enhancing its versatility in different environments.
These features make the CSD19536KCS a reliable choice for high-performance power electronics.
Pinout
- Pin Count: The CSD19536KCS has three pins.
- Pin Functions:
1. Gate (G): This pin is used to control the switching of the MOSFET. A voltage applied to the gate determines whether the MOSFET is on or off.
2. Drain (D): This is the main current-carrying terminal, where current enters the MOSFET from the load.
3. Source (S): This terminal is typically connected to ground or the negative side of the power supply, allowing current to exit the MOSFET when it is in the on state.
The CSD19536KCS is known for its high efficiency and low on-resistance, which makes it suitable for various power management applications, including DC-DC converters and load switches.
Manufacturer
Application
1. Power Supply Units: Enhances efficiency in switch-mode power supplies (SMPS).
2. DC-DC Converters: Used in step-up or step-down voltage converters.
3. Battery Management Systems: Facilitates efficient charging and discharging cycles.
4. Motor Control: Provides precise control in electric motors for automotive and industrial applications.
5. Load Switches: Acts as a high-efficiency switch for power distribution.
6. LED Drivers: Offers current control and power efficiency in lighting applications.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.