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CSD19531Q5A
+NomenclatureMOSFET N-CH 100V 100A 8VSON
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FabricantTexas Instruments
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Pièce fabricant #CSD19531Q5A
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Package VSONP-8
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En stock5572
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 100A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 6.4mOhm @ 16A, 10V |
| Vgs(th)(Max) @ Id | 3.3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 48 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3870 pF @ 50 V |
| Power Dissipation (Max) | 3.3W (Ta), 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSONP (5x6) |
Présentation
Description
- "CSD" might stand for a department, such as Computer Science Department.
- "19531" could indicate a particular course number, often reflecting the subject focus or level of study.
- "Q5A" might denote a specific section, semester, or specialization within the course.
An "Introduction" course usually aims to provide foundational knowledge, preparing students for advanced topics. If this course falls under a department like computer science, it might cover basics such as programming, data structures, algorithms, or computer systems.
For specific details, including syllabus, prerequisites, and objectives, you would typically refer to the academic catalog or contact the department offering the course.
Equivalent
1. Infineon: BSC026N06NS
2. ON Semiconductor: NTMFS5C604NL
3. STMicroelectronics: STL120N6F7
While these components may have similar specifications, always check the datasheets for detailed comparisons to ensure compatibility with your application.
Features
1. N-Channel MOSFET: Designed for high-efficiency power conversion.
2. Low On-Resistance: Offers a low R_DS(on) of approximately 1.2 mΩ, reducing power losses.
3. High Current Capacity: Capable of handling continuous currents up to 100 A.
4. Voltage Rating: Supports a maximum drain-source voltage of 40 V.
5. Compact Package: Comes in a 5x6 mm SON (Small Outline No-lead) package, which saves board space.
6. Thermal Performance: Designed for optimal thermal management, enhancing reliability.
7. Protective Features: Includes ESD protection, ensuring robustness against electrostatic discharge.
8. Fast Switching: Delivers high-speed performance suitable for applications requiring quick transitions.
9. Wide Application Range: Ideal for use in synchronous rectification, motor control, and DC-DC converters.
10. RoHS Compliant: Environmentally friendly manufacturing standards.
These features make the CSD19531Q5A suitable for a variety of applications requiring efficient power management and compact design.
Pinout
1. Gate (G): This pin is used to control the MOSFET's operation, allowing voltage to control the flow of current between the drain and source.
2. Source (S): There are typically multiple source pins that connect to the source terminal of the MOSFET. For the CSD19531Q5A, these are usually arranged surrounding the device.
3. Drain (D): The drain is internally connected to the thermal pad at the bottom of the package, allowing efficient heat dissipation.
The primary function of the CSD19531Q5A is to act as a switch or amplifier in power management applications, where it allows or blocks the flow of electricity in a circuit based on signals received at the gate. This component is ideal for use in DC-DC converters, synchronous rectification, and other applications requiring a high-efficiency power switch.