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CSD18533KCS
+NomenclatureMOSFET N-CH 60V 72A/100A TO220-3
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FabricantTexas Instruments
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Pièce fabricant #CSD18533KCS
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En stock5506
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Spécifications
| Attribut | Valeur |
| Series | NexFET™ |
| Part Status | Active |
| Base Product Number | CSD18533 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 72A (Ta), 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3025 pF @ 30 V |
| Power Dissipation (Max) | 192W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Packaging | Tube |
Présentation
Description
CSD18533KCS is a high‑performance N‑channel enhancement MOSFET from ON Semiconductor’s CSD family. It is intended for efficient switching in power‑path designs such as DC–DC converters, motor drivers, and load switches.
Key points:
- N‑channel power MOSFET designed for low conduction losses and fast switching.
- Typical ratings (verify in the datasheet): VDS around 30 V, low RDS(on) (tens of milliohms), substantial continuous drain current, logic‑level gate drive, and robust switching/avalanche characteristics.
- Package: surface‑mount (common options in CSD devices include DPAK/TO‑252 or similar), suitable for compact, low‑profile boards.
- Benefits: high efficiency, compact footprint, straightforward drive requirements, good thermal performance.
Use cases include synchronous buck converters, point‑of‑load regulators, and automotive/industrial power applications. For exact electrical specs, packaging details, and thermal data, consult the latest ON Semiconductor datasheet for CSD18533KCS.
Key points:
- N‑channel power MOSFET designed for low conduction losses and fast switching.
- Typical ratings (verify in the datasheet): VDS around 30 V, low RDS(on) (tens of milliohms), substantial continuous drain current, logic‑level gate drive, and robust switching/avalanche characteristics.
- Package: surface‑mount (common options in CSD devices include DPAK/TO‑252 or similar), suitable for compact, low‑profile boards.
- Benefits: high efficiency, compact footprint, straightforward drive requirements, good thermal performance.
Use cases include synchronous buck converters, point‑of‑load regulators, and automotive/industrial power applications. For exact electrical specs, packaging details, and thermal data, consult the latest ON Semiconductor datasheet for CSD18533KCS.
Features
CSD18533KCS is a TI NexFET N-channel enhancement-mode power MOSFET. Key features:
- 30-V N-channel, suitable for low-voltage DC-DC and load-switching apps
- Very low on-resistance for high-efficiency operation
- Low gate-drive power with reduced gate charge for fast switching
- Trench MOSFET technology for high density and low drain–source capacitance
- Rugged body diode with good reverse-recovery characteristics; avalanche ruggedness
- High pulsed current capability and solid thermal performance
- Wide operating temperature range with robust ESD protection
- RoHS/Green compliant, available in compact power packages (e.g., D²PAK/DSON/SO-8) depending on supplier
Ideal for synchronous buck converters, motor drivers, and power-switching applications where efficiency and physical size matter.
- 30-V N-channel, suitable for low-voltage DC-DC and load-switching apps
- Very low on-resistance for high-efficiency operation
- Low gate-drive power with reduced gate charge for fast switching
- Trench MOSFET technology for high density and low drain–source capacitance
- Rugged body diode with good reverse-recovery characteristics; avalanche ruggedness
- High pulsed current capability and solid thermal performance
- Wide operating temperature range with robust ESD protection
- RoHS/Green compliant, available in compact power packages (e.g., D²PAK/DSON/SO-8) depending on supplier
Ideal for synchronous buck converters, motor drivers, and power-switching applications where efficiency and physical size matter.
Pinout
CSD18533KCS is a TI NexFET N-channel MOSFET. It comes in a 6-pin package and functions as a single N-channel enhancement-mode power MOSFET used as a switching transistor in DC-DC converters and power-management circuits.
Manufacturer
- Manufacturer: Texas Instruments (TI).
- What kind of company: American multinational semiconductor company that designs and manufactures a wide range of analog, embedded processing, and power management ICs (including MOSFETs); headquartered in Dallas, Texas.
- What kind of company: American multinational semiconductor company that designs and manufactures a wide range of analog, embedded processing, and power management ICs (including MOSFETs); headquartered in Dallas, Texas.
Application
Applications of CSD18533KCS (power MOSFET):
- High-efficiency DC-DC converters (buck/boost) and synchronous rectification
- High-side or low-side switches in battery-powered devices
- Motor, stepper, and fan control
- Automotive power electronics and body electronics
- Solar/renewable energy interfaces and low-voltage inverters
- General-purpose power switching in consumer electronics and servers
- High-efficiency DC-DC converters (buck/boost) and synchronous rectification
- High-side or low-side switches in battery-powered devices
- Motor, stepper, and fan control
- Automotive power electronics and body electronics
- Solar/renewable energy interfaces and low-voltage inverters
- General-purpose power switching in consumer electronics and servers
Package
X2SON-6 (6-pin, 2.9 mm × 2.9 mm) package.
