CSD16411Q3

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CSD16411Q3

+Nomenclature

MOSFET N-CH 25V 14A/56A 8VSON

  • FabricantTexas Instruments

  • Pièce fabricant #CSD16411Q3

  • Package TDFN-8

  • En stock5085

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Spécifications

Attribut Valeur
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Series NexFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain(Id) @ 25°C 14A (Ta), 56A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 10mOhm @ 10A, 10V
Vgs(th)(Max) @ Id 2.3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 3.8 nC @ 4.5 V
Vgs(Max) +16V, -12V
Input Capacitance(Ciss)(Max) @ Vds 570 pF @ 12.5 V
Power Dissipation (Max) 2.7W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-VSONP (3x3.15)

Présentation

Description

The CSD16411Q3 is a high-performance silicon carbide (SiC) Schottky diode designed for power electronics applications. Key features include:
- Low forward voltage drop for reduced conduction losses.
- High-temperature operation (up to 175°C), ideal for harsh environments.
- Fast switching with minimal reverse recovery, improving efficiency in high-frequency circuits.
- Robust surge current capability, enhancing reliability.
Commonly used in power supplies, solar inverters, and EV charging systems, the CSD16411Q3 offers superior performance over traditional silicon diodes, particularly in efficiency and thermal management.
For detailed specs, refer to the datasheet from the manufacturer (e.g., Texas Instruments).

Equivalent

The CSD16411Q3 is a 30V N-channel NexFET power MOSFET. Equivalent alternatives include:
- Infineon BSC123N08NS3
- ON Semiconductor NVTFS4C06N
- Vishay SiR494DP
- TI CSD17313Q3 (similar specs)
Check datasheets for exact compatibility in your application.

Features

The CSD16411Q3 is a 40V, 10A N-channel NexFET power MOSFET from Texas Instruments, designed for high-efficiency power applications. Key features include:
- Low On-Resistance (RDS(on)): 3.8 mΩ (max at VGS = 10V), reducing conduction losses.
- Fast Switching: Optimized for high-frequency applications (e.g., DC/DC converters, motor drives).
- Low Gate Charge (QG): 18 nC (typ), enhancing switching efficiency.
- Thermal Performance: Low thermal resistance (RθJA = 40°C/W) in a 5mm x 6mm SON package.
- Avalanche Energy Rated: Improves reliability in rugged environments.
- Logic-Level Drive: Compatible with 4.5V gate drive (VGS(th) = 2V typ).
Ideal for synchronous rectification, load switches, and battery management due to its high current handling and efficiency.

Manufacturer

The CSD16411Q3 is manufactured by Texas Instruments (TI), a leading global semiconductor company. TI designs and produces analog and embedded processing chips for industries like automotive, industrial, consumer electronics, and communications. Known for innovation, TI provides high-performance, reliable components, including power management ICs like the CSD16411Q3.

Application

The CSD16411Q3 is a 30V N-channel MOSFET commonly used in:
1. Power Management – DC-DC converters, voltage regulators.
2. Load Switching – Battery protection, power distribution.
3. Motor Control – Small motor drivers in consumer electronics.
4. Automotive Systems – LED lighting, infotainment power control.
5. Portable Devices – Power switches in smartphones, tablets.
Its low on-resistance (RDS(on)) and compact package (SON 2x2) make it ideal for space-constrained, high-efficiency applications.

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