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CSD13381F4T
+NomenclatureMOSFET N-CH 12V 2.1A 3PICOSTAR
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FabricantTexas Instruments
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Pièce fabricant #CSD13381F4T
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En stock5602
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Spécifications
| Attribut | Valeur |
| Supplier | Texas Instruments |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | FemtoFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12 V |
| Current - Continuous Drain(Id) @ 25°C | 2.1A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 4.5V |
| Rds On(Max) @ Id Vgs | 180mOhm @ 500mA, 4.5V |
| Vgs(th)(Max) @ Id | 1.1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 1.4 nC @ 4.5 V |
| Vgs(Max) | 8V |
| Input Capacitance(Ciss)(Max) @ Vds | 200 pF @ 6 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 3-PICOSTAR |
Présentation
Description
Introduction to CSD13381F4T:
- It’s a Texas Instruments NexFET Power MOSFET—a high-efficiency N-channel enhancement-mode transistor used as a switch in power-management circuits.
- Uses: common in DC-DC converters, load switches, protection circuits, and other power-management blocks in compact electronics.
- Key advantages: very low on-resistance to minimize conduction loss, low gate charge for easy gate drive, and small surface-mount packages with fast-switching performance from TI’s NexFET technology.
- Packaging/drive: available in SMT packages; gate driven by logic-level voltages; design should consider heat dissipation and safe operating area.
- Learn more: consult TI’s product page and the CSD13381F4T datasheet for exact electrical specs, graphs, typical application circuits, and packaging options.
- It’s a Texas Instruments NexFET Power MOSFET—a high-efficiency N-channel enhancement-mode transistor used as a switch in power-management circuits.
- Uses: common in DC-DC converters, load switches, protection circuits, and other power-management blocks in compact electronics.
- Key advantages: very low on-resistance to minimize conduction loss, low gate charge for easy gate drive, and small surface-mount packages with fast-switching performance from TI’s NexFET technology.
- Packaging/drive: available in SMT packages; gate driven by logic-level voltages; design should consider heat dissipation and safe operating area.
- Learn more: consult TI’s product page and the CSD13381F4T datasheet for exact electrical specs, graphs, typical application circuits, and packaging options.
Equivalent
There is no guaranteed pin‑for‑pin cross‑reference online, but equivalent choices are other parts in TI’s NexFET CSD1338xF4 family (e.g., CSD13383F4T, CSD13384F4T) or any N‑channel power MOSFET with the same package/pinout, VDS, ID, RDS(on), gate charge and thermal ratings. Verify with the datasheets and TI’s parametric search/distributor cross‑reference before replacing.
Features
CSD13381F4T Features:
- 30-V N-channel enhancement-mode MOSFET
- NexFET trench technology for low Rds(on) and high efficiency
- Very low gate charge and input capacitance for fast switching
- Logic-level drive capability for improved system efficiency
- Small surface-mount package suitable for compact power designs
- Pb-free, RoHS compliant
- Ideal for load switching, DC-DC converters, motor control, and high-efficiency power applications
- 30-V N-channel enhancement-mode MOSFET
- NexFET trench technology for low Rds(on) and high efficiency
- Very low gate charge and input capacitance for fast switching
- Logic-level drive capability for improved system efficiency
- Small surface-mount package suitable for compact power designs
- Pb-free, RoHS compliant
- Ideal for load switching, DC-DC converters, motor control, and high-efficiency power applications
Pinout
CSD13381F4T is a 4‑pin N‑channel enhancement‑mode power MOSFET (TI NexFET) in a 4‑lead DFN/PowerPAD style package. Pins: Gate (G), Source (S), Drain (D) and an exposed thermal/drain pad (PCB tab) — the exposed pad is typically the main drain and thermal return. Function: low RDS(on) power switching transistor for DC–DC converters, load switching and synchronous rectification.
Manufacturer
Manufacturer: Texas Instruments Incorporated (TI).
What kind of company: TI is an American multinational semiconductor company that designs and manufactures analog and mixed-signal integrated circuits, power-management devices (including MOSFETs like the CSD series), microcontrollers and embedded processors. Headquartered in Dallas, Texas, it supplies components for industrial, automotive, communications and consumer electronics markets and is publicly traded (NASDAQ: TXN).
What kind of company: TI is an American multinational semiconductor company that designs and manufactures analog and mixed-signal integrated circuits, power-management devices (including MOSFETs like the CSD series), microcontrollers and embedded processors. Headquartered in Dallas, Texas, it supplies components for industrial, automotive, communications and consumer electronics markets and is publicly traded (NASDAQ: TXN).
Application
- High-efficiency DC-DC converters and VRMs for CPUs/GPUs, SoCs, and memory
- Synchronous buck regulator rectification
- Load-switch/high-side switch applications for power rails in mobile devices
- Automotive power-management (infotainment, ECUs, body control)
- Industrial power stages and motor-drive applications
- Power-management circuits in servers, data centers, and networking gear
- Synchronous buck regulator rectification
- Load-switch/high-side switch applications for power rails in mobile devices
- Automotive power-management (infotainment, ECUs, body control)
- Industrial power stages and motor-drive applications
- Power-management circuits in servers, data centers, and networking gear
Package
I can’t access real-time datasheets. The trailing "T" usually means tape-and-reel; the exact package type (e.g., VSON, SON, PowerPAK) for CSD13381F4T should be confirmed on the Texas Instruments product page or datasheet.
