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CSD13380F3
+NomenclatureMOSFET N-CH 12V 3.6A 3PICOSTAR
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FabricantTexas Instruments
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Pièce fabricant #CSD13380F3
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En stock3085
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | FemtoFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12 V |
| Current - Continuous Drain(Id) @ 25°C | 3.6A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 4.5V |
| Rds On(Max) @ Id Vgs | 76mOhm @ 400mA, 4.5V |
| Vgs(th)(Max) @ Id | 1.3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 1.2 nC @ 4.5 V |
| Vgs(Max) | 8V |
| Input Capacitance(Ciss)(Max) @ Vds | 156 pF @ 6 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 3-PICOSTAR |
Présentation
Description
The CSD13380F3 is a N-channel MOSFET from Texas Instruments, designed for high-efficiency power management in applications like DC-DC converters, load switches, and motor control.
Key Features:
- Low On-Resistance (RDS(on)): 3.8 mΩ (max) at VGS = 4.5V, reducing conduction losses.
- Low Gate Charge (Qg): Enhances switching efficiency.
- Small Package (SON 3x3): Saves board space.
- Wide Voltage Range: Supports 30V drain-source voltage (VDS).
Typical Applications:
- Power supplies, battery management, and portable electronics.
This MOSFET is optimized for high current (up to 80A) and fast switching, making it ideal for compact, energy-efficient designs.
Key Features:
- Low On-Resistance (RDS(on)): 3.8 mΩ (max) at VGS = 4.5V, reducing conduction losses.
- Low Gate Charge (Qg): Enhances switching efficiency.
- Small Package (SON 3x3): Saves board space.
- Wide Voltage Range: Supports 30V drain-source voltage (VDS).
Typical Applications:
- Power supplies, battery management, and portable electronics.
This MOSFET is optimized for high current (up to 80A) and fast switching, making it ideal for compact, energy-efficient designs.
Equivalent
The CSD13380F3 is a 30V N-channel NexFET power MOSFET. Equivalent alternatives include:
- Infineon BSC093N03LS (30V, 9.3mΩ)
- ON Semiconductor NTTFS3H30N (30V, 3.3mΩ)
- Vishay SiR476DP (30V, 7.6mΩ)
- STL110N3LLH6 (30V, 11mΩ)
Check datasheets for exact specs like RDS(on), current rating, and package compatibility before substitution.
- Infineon BSC093N03LS (30V, 9.3mΩ)
- ON Semiconductor NTTFS3H30N (30V, 3.3mΩ)
- Vishay SiR476DP (30V, 7.6mΩ)
- STL110N3LLH6 (30V, 11mΩ)
Check datasheets for exact specs like RDS(on), current rating, and package compatibility before substitution.
Pinout
The CSD13380F3 is a 30V N-channel NexFET power MOSFET in a 3-pin SOT-23 package.
Pin Functions:
1. Pin 1 (Gate - G): Controls the MOSFET switching.
2. Pin 2 (Drain - D): Connects to the load (high-voltage side).
3. Pin 3 (Source - S): Connects to ground (low-voltage side).
Key Features:
- Low RDS(on) for efficient power handling.
- 30V drain-source voltage (VDS) rating.
- Compact SOT-23 footprint for space-constrained designs.
Commonly used in DC-DC converters, load switches, and power management applications.
Pin Functions:
1. Pin 1 (Gate - G): Controls the MOSFET switching.
2. Pin 2 (Drain - D): Connects to the load (high-voltage side).
3. Pin 3 (Source - S): Connects to ground (low-voltage side).
Key Features:
- Low RDS(on) for efficient power handling.
- 30V drain-source voltage (VDS) rating.
- Compact SOT-23 footprint for space-constrained designs.
Commonly used in DC-DC converters, load switches, and power management applications.
Manufacturer
The CSD13380F3 is a power MOSFET manufactured by Texas Instruments (TI).
Texas Instruments is a leading global semiconductor company specializing in analog and embedded processing technologies. Founded in 1930 and headquartered in Dallas, Texas, TI designs and manufactures a wide range of chips for industrial, automotive, consumer electronics, and communications applications. The company is known for its high-performance power management, signal chain, and microcontroller solutions.
The CSD13380F3 is part of TI’s NexFET™ power MOSFET lineup, optimized for high-efficiency, low-voltage applications like DC-DC converters and load switches.
Texas Instruments is a leading global semiconductor company specializing in analog and embedded processing technologies. Founded in 1930 and headquartered in Dallas, Texas, TI designs and manufactures a wide range of chips for industrial, automotive, consumer electronics, and communications applications. The company is known for its high-performance power management, signal chain, and microcontroller solutions.
The CSD13380F3 is part of TI’s NexFET™ power MOSFET lineup, optimized for high-efficiency, low-voltage applications like DC-DC converters and load switches.
Application
The CSD13380F3, a 30V N-channel MOSFET by Texas Instruments, is commonly used in:
1. Power Management – DC-DC converters, voltage regulators.
2. Load Switching – Battery protection, power distribution.
3. Motor Control – Small motor drivers in consumer electronics.
4. Portable Devices – Smartphones, tablets (efficient power handling).
5. Automotive – Low-power auxiliary systems.
Its low on-resistance (RDS(on)) and compact package (SON 2x2) make it ideal for space-constrained, high-efficiency applications.
1. Power Management – DC-DC converters, voltage regulators.
2. Load Switching – Battery protection, power distribution.
3. Motor Control – Small motor drivers in consumer electronics.
4. Portable Devices – Smartphones, tablets (efficient power handling).
5. Automotive – Low-power auxiliary systems.
Its low on-resistance (RDS(on)) and compact package (SON 2x2) make it ideal for space-constrained, high-efficiency applications.
