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CGH40006P
+NomenclatureRF MOSFET HEMT 28V 440109
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FabricantWolfspeed, société par actions limitée.
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Pièce fabricant #CGH40006P
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Package 440109
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En stock21731
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Spécifications
| Attribut | Valeur |
| Supplier | Wolfspeed, Inc. |
| Package | Tray |
| Series | GaN |
| ProductStatus | Active |
| TransistorType | HEMT |
| Frequency | 0Hz ~ 6GHz |
| Gain | 13dB |
| Voltage-Test | 28 V |
| CurrentRating(Amps) | 3.5A |
| Current-Test | 100 mA |
| Power-Output | 8W |
| Voltage-Rated | 84 V |
| Package/Case | 440109 |
Présentation
Description
To introduce such a course, you would typically outline its core objectives, content, prerequisites, and learning outcomes. The course may focus on a specialized subject within a specific field, possibly advanced given the 4000-level code, which often indicates upper-level undergraduate or even graduate study.
For precise information, you should refer to the syllabus or academic catalog provided by the educational institution. This would include details such as the subject matter covered, the format of the course (lectures, labs, etc.), any required textbooks, assessment methods, and faculty involved. If you are enrolled or considering enrollment, contacting the course instructor or academic advisor for more information could also be beneficial.
Equivalent
1. NXP's AFG25S010 (10W GaN RF transistor)
2. Qorvo's TGF2023-2-10 (10W GaN RF transistor)
3. Ampleon's CLF1G0035S-10 (10W GaN RF transistor)
These alternatives may have differences in specifications and packaging, so it's important to verify compatibility with your specific requirements.
Features
1. Frequency Range: It operates effectively across a broad frequency range, typically from DC to 6 GHz, making it versatile for various applications.
2. High Power Output: Offers high power density and efficiency, with an output of up to 6 watts, suitable for demanding applications.
3. Efficiency: Exhibits high efficiency, reducing power consumption and heat generation, which is beneficial for both performance and longevity.
4. Robustness: GaN technology provides robustness and reliability, capable of withstanding higher voltages and temperatures compared to other semiconductor materials.
5. Compact Design: Available in a small, surface-mount package, optimizing space on circuit boards.
6. Thermal Management: Features efficient thermal characteristics to manage heat dissipation effectively.
7. Applications: Suitable for use in telecommunications, radar, aerospace, and other high-frequency systems.
These features make the CGH40006P an excellent choice for modern RF amplifier designs.
Pinout
1. Gate: This pin is used to control the operation of the transistor. A voltage applied to the gate regulates the current between the source and drain.
2. Drain: This is the output pin where the amplified current flows out. It is typically connected to the positive side of the power supply in RF amplifier designs.
3. Source: This pin is connected to the ground in most circuit configurations and serves as the return path for the current.
The CGH40006P is used primarily in high-frequency amplifier designs, delivering efficient power with high-linearity and durability due to GaN technology. Its simple pin configuration makes it suitable for integration into various RF systems. For exact package details and pin layout, referring to the manufacturer's datasheet is recommended.