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C2M0160120D
+NomenclatureSICFET N-CH 1200V 19A TO247-3
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FabricantWolfspeed, société par actions limitée.
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Pièce fabricant #C2M0160120D
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Fiche technique C2M0160120D DataSheet
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En stock4819
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Spécifications
| Attribut | Valeur |
| Series | Z-FET™ |
| PartStatus | Obsolete |
| BaseProductNumber | C2M0160120 |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| Current-ContinuousDrain(Id)@25°C | 19A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 20V |
| RdsOn(Max)@Id,Vgs | 196mOhm @ 10A, 20V |
| Vgs(th)(Max)@Id | 2.5V @ 500µA |
| GateCharge(Qg)(Max)@Vgs | 32.6 nC @ 20 V |
| Vgs(Max) | +25V, -10V |
| InputCapacitance(Ciss)(Max)@Vds | 527 pF @ 800 V |
| PowerDissipation(Max) | 125W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
| Package | TO-247-3 |
| Packaging | Tube |
Présentation
Description
- 1200V voltage rating
- 16mΩ on-resistance (RDS(on))
- High-speed switching for reduced losses
- Low gate charge (QG) for improved efficiency
It is ideal for:
- Electric vehicle (EV) systems
- Renewable energy inverters
- Industrial power supplies
The TO-247-4L package enhances thermal performance, making it suitable for demanding environments. Its SiC technology offers superior thermal conductivity and reliability compared to traditional silicon MOSFETs.
For detailed specs, refer to the datasheet or Wolfspeed’s official documentation.
Features
- Low On-Resistance (RDS(on)): 16mΩ typical, reducing conduction losses.
- High Voltage Rating: 1200V, suitable for industrial and automotive applications.
- Fast Switching: Optimized for high-frequency operation, minimizing switching losses.
- Low Gate Charge (Qg): Enhances efficiency in high-speed switching.
- High Temperature Operation: Robust performance up to 175°C.
- Avalanche Rated: Ensures reliability under harsh conditions.
- TO-247-4 Package: Improved thermal performance with an additional Kelvin source pin.
Ideal for EV chargers, solar inverters, and power supplies, this MOSFET offers superior efficiency and thermal management.
Manufacturer
Wolfspeed specializes in SiC and gallium nitride (GaN) solutions, focusing on high-efficiency power and radio-frequency (RF) applications. Known for innovation in energy-efficient systems, their products are widely used in electric vehicles, renewable energy, and industrial power supplies.
Headquartered in Durham, North Carolina, USA, Wolfspeed is a key player in advancing next-generation semiconductor technology.
Package
Frequently Asked Questions
Q: What is the maximum drain-source voltage (Vdss) rating for the C2M0160120D?
A: The C2M0160120D has a drain-to-source voltage rating of 1200 V, suitable for high-voltage power conversion applications.
Q: What is the typical on-resistance (Rds(on)) at 10A and 20V gate drive?
A: The maximum Rds(on) is 196 mOhm at 10A drain current and 20V gate-to-source voltage, ensuring low conduction losses.
Q: Can this SiC MOSFET handle high switching frequencies in power designs?
A: Yes, with low gate charge (Qg max 32.6 nC at 20V) and low input capacitance (527 pF at 800V), it enables efficient high-frequency switching.
Q: What is the recommended gate drive voltage for optimum performance?
A: A drive voltage of 20V is specified for achieving the minimum Rds(on), while the maximum allowable gate voltage is +25V (with -10V negative limit).
Q: What is the maximum continuous drain current at 25°C case temperature?
A: The device can continuously conduct up to 19A (Tc) at 25°C, making it suitable for moderate-power applications.
Q: Is the C2M0160120D a through-hole or surface-mount package?
A: It uses a through-hole TO-247-3 package, ideal for heatsink mounting in high-power and industrial designs.
Q: What is the maximum power dissipation capability of this device?
A: The maximum power dissipation is 125W (Tc), allowing robust thermal management in demanding circuits.
Q: What is the operating temperature range for this SiC MOSFET?
A: It operates from -55°C to +150°C (junction temperature), ensuring reliability in extreme environments.
