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BYV415K-600PQ
+NomenclatureDIODE GEN PURP 600V 15A TO3P
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FabricantSemi - conducteur renergique
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Pièce fabricant #BYV415K-600PQ
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Fiche technique BYV415K-600PQ DataSheet
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Package TO-3P-3
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En stock6801
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | WeEn Semiconductors |
| Package / Case | Tube |
| Part Status | Active |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified(Io)(per Diode) | 15A |
| Voltage - Forward (Vf) (Max) @ If | 2.1 V @ 15 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 45 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Mounting Type | Through Hole |
