BUK9Y25-80E

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BUK9Y25-80E

+Nomenclature

MOSFETs

  • FabricantLe nexperia

  • Pièce fabricant #BUK9Y25-80E

  • En stock21021

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Présentation

Description

The BUK9Y25-80E is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used for electronic switching and amplification applications. It is part of the TrenchMOS family produced by Nexperia, known for their efficiency and reliability in high-speed switching applications.
Key features of the BUK9Y25-80E include its capability to handle high currents and voltages, with a maximum drain-source voltage (V_DS) of 80 volts and a continuous drain current (I_D) up to a specified limit determined by the device's thermal and electrical ratings. Its low on-state resistance (R_DS(on)) ensures minimal power loss, making it suitable for power management, motor control, and DC-DC converters.
This MOSFET is typically packaged in a standard TO-220 or similar format, allowing for efficient heat dissipation. Its design incorporates advanced trench technology to enhance performance by reducing gate charge and improving switching speeds. This makes the BUK9Y25-80E an ideal choice for various industrial and consumer electronics applications where efficient power handling is essential.

Equivalent

The BUK9Y25-80E is an N-channel MOSFET commonly used for switching applications. Equivalent products may include:
1. IRFZ44N - A similar N-channel MOSFET with comparable voltage and current ratings.
2. STP80NF10 - Another N-channel MOSFET with similar specifications.
3. FQP30N06 - A suitable equivalent for some applications.
4. NXP BUK7Y25-80E - A direct equivalent from the same series.
Always verify specific parameters and pin configurations to ensure compatibility in your application.

Features

The BUK9Y25-80E is a N-channel MOSFET transistor. It features a maximum drain-source voltage (V_DS) of 80V and a continuous drain current (I_D) of about 25A, making it suitable for medium-power applications. The MOSFET has a low on-state resistance (R_DS(on)), which helps reduce power losses and increase efficiency in switching applications. It typically comes in a DPAK (TO-252) surface-mount package, which is compact and suitable for automated assembly processes. The device is designed to handle fast switching speeds, contributing to reduced switching losses and improved performance in high-frequency applications. Additionally, it is often used in applications like power management, automotive, motor control, and DC-DC converters. The MOSFET's temperature range and thermal performance depend on packaging and specific application conditions, so appropriate heat management is essential.

Pinout

The BUK9Y25-80E is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from Nexperia. It is commonly used for switching applications and is designed for high-speed, high-efficiency power management.
Pin Count and Function:
1. G (Gate) - This pin is used to control the MOSFET. A voltage applied here determines whether the MOSFET is on or off.
2. D (Drain) - This pin is where the current flows out of the MOSFET when it is turned on.
3. S (Source) - This pin is the terminal through which the current enters the MOSFET.
The BUK9Y25-80E typically comes in a standard SOT223 package, which is a surface-mounted package with three pins, maintaining a compact design suitable for PCB mounting. It features low on-state resistance, making it efficient for switching operations, and is suitable for various power management applications in electronics.

Manufacturer

The BUK9Y25-80E is manufactured by Nexperia. Nexperia is a global semiconductor company known for producing discrete and power devices, such as diodes, transistors, and analog & logic integrated circuits. It was originally part of NXP Semiconductors before becoming an independent company in 2017. Nexperia focuses on delivering efficient, reliable, and widely used semiconductor components, serving a variety of markets including automotive, industrial, computing, and consumer electronics. The company's expertise lies in high-volume production with a commitment to quality and innovation in power efficiency and small package technologies.

Application

The BUK9Y25-80E is a logic-level N-channel MOSFET commonly used in various applications due to its efficiency and reliability. Key application areas include:
1. Power Management: Used in DC-DC converters and voltage regulation modules.
2. Automotive Systems: Suitable for engine control units, lighting systems, and electronic control units.
3. Consumer Electronics: Ideal for power supply circuits in smartphones, tablets, and laptops.
4. Industrial Equipment: Applicable in motor drives, control systems, and automation.
5. LED Drivers: Utilized for driving LED lighting systems efficiently.
6. Telecommunications: Used in network infrastructure for switching and amplification.
Its logic-level gate drive makes it suitable for interfacing with microcontrollers and digital circuits.

Package

The BUK9Y25-80E is typically available in a SOT669 package, also known as a Power-SO8 package. This package type is designed for surface mounting, commonly used in power MOSFET applications to offer efficient thermal performance and compact size.

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