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BUK9K52-60E
+NomenclatureMOSFETs
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FabricantLe nexperia
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Pièce fabricant #BUK9K52-60E
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En stock15202
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Présentation
Description
The BUK9K52-60E is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications. It is commonly used in various electronic devices for managing power, thanks to its low on-state resistance and high-speed switching capabilities. This MOSFET is particularly suited for use in DC-DC converters, motor drives, and other power management systems.
Key features of the BUK9K52-60E include a maximum drain-source voltage (V_DS) of 60V, a continuous drain current (I_D) of up to 52A, and a low gate charge, which contributes to its efficient performance. The device is typically housed in a TO-220 or similar package, allowing for convenient mounting and heat dissipation.
This MOSFET is favored for its robustness and reliability in demanding environments, thanks to its ability to handle high currents and voltages while maintaining efficiency. Its design makes it an excellent choice for both industrial and consumer electronics applications where efficient power regulation is critical.
Key features of the BUK9K52-60E include a maximum drain-source voltage (V_DS) of 60V, a continuous drain current (I_D) of up to 52A, and a low gate charge, which contributes to its efficient performance. The device is typically housed in a TO-220 or similar package, allowing for convenient mounting and heat dissipation.
This MOSFET is favored for its robustness and reliability in demanding environments, thanks to its ability to handle high currents and voltages while maintaining efficiency. Its design makes it an excellent choice for both industrial and consumer electronics applications where efficient power regulation is critical.
Equivalent
The BUK9K52-60E is an N-channel MOSFET. Equivalent products include:
1. STMicroelectronics - STL13N60M2
2. Infineon - IPP60R099P7
3. ON Semiconductor - FDPF12N60NZ
4. Vishay - SIHP26N60E
These alternatives generally have similar voltage and current ratings but always check specific parameters to ensure compatibility.
1. STMicroelectronics - STL13N60M2
2. Infineon - IPP60R099P7
3. ON Semiconductor - FDPF12N60NZ
4. Vishay - SIHP26N60E
These alternatives generally have similar voltage and current ratings but always check specific parameters to ensure compatibility.
Features
The BUK9K52-60E is a N-channel MOSFET transistor produced by Nexperia. It is designed for use in various applications requiring efficient power management and switching. Some of its key features include:
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 60V and can handle a continuous drain current (I_D) of up to 26A.
2. Low On-Resistance: The device offers a low on-state resistance (R_DS(on)), typically around 27 mΩ, which helps minimize power losses and improve efficiency in applications.
3. Fast Switching: It is capable of fast switching, making it suitable for high-speed applications and minimizing power dissipation during transitions.
4. Thermal Performance: The MOSFET is designed to operate efficiently under high temperature conditions, featuring a low thermal resistance package to help dissipate heat effectively.
5. Robustness: It includes built-in protection features like avalanche energy capability, ensuring reliable performance in demanding environments.
These features make the BUK9K52-60E suitable for use in power management, motor control, and other switching applications.
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 60V and can handle a continuous drain current (I_D) of up to 26A.
2. Low On-Resistance: The device offers a low on-state resistance (R_DS(on)), typically around 27 mΩ, which helps minimize power losses and improve efficiency in applications.
3. Fast Switching: It is capable of fast switching, making it suitable for high-speed applications and minimizing power dissipation during transitions.
4. Thermal Performance: The MOSFET is designed to operate efficiently under high temperature conditions, featuring a low thermal resistance package to help dissipate heat effectively.
5. Robustness: It includes built-in protection features like avalanche energy capability, ensuring reliable performance in demanding environments.
These features make the BUK9K52-60E suitable for use in power management, motor control, and other switching applications.
Pinout
The BUK9K52-60E is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Nexperia. It typically comes in a standard SOT-220 package, which features three pins. These pins are:
1. Gate (G): This is the control pin used to turn the MOSFET on or off. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): The drain is where the current enters the MOSFET when it is in the "on" state.
3. Source (S): The source is where the current exits the MOSFET.
The BUK9K52-60E is designed for use in applications requiring efficient power management and switching, such as in power supplies and motor drives. It provides high-speed switching, low ON-state resistance, and is capable of handling high current and voltage levels.
1. Gate (G): This is the control pin used to turn the MOSFET on or off. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): The drain is where the current enters the MOSFET when it is in the "on" state.
3. Source (S): The source is where the current exits the MOSFET.
The BUK9K52-60E is designed for use in applications requiring efficient power management and switching, such as in power supplies and motor drives. It provides high-speed switching, low ON-state resistance, and is capable of handling high current and voltage levels.
Manufacturer
The BUK9K52-60E is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in the production of discrete and MOSFET components, as well as analog and logic ICs. The company, originally part of NXP Semiconductors, became independent in 2017 and focuses on efficiency and miniaturization to cater to the automotive, industrial, computing, and consumer electronics markets.
Application
The BUK9K52-60E is a N-channel MOSFET designed for high-efficiency power management applications. Its application areas include:
1. DC-DC Converters: Utilized in buck, boost, and other converter topologies for efficient voltage regulation.
2. Motor Drives: Suitable for driving motors in consumer electronics and automotive applications.
3. Power Management: Employed in power management systems for laptops, desktops, and other electronic devices.
4. Lighting Systems: Used in LED drivers and other lighting control systems.
5. Battery Management: Applicable in battery charging and discharging circuits, particularly in portable electronics.
Its low on-resistance and fast switching capabilities make it ideal for these applications.
1. DC-DC Converters: Utilized in buck, boost, and other converter topologies for efficient voltage regulation.
2. Motor Drives: Suitable for driving motors in consumer electronics and automotive applications.
3. Power Management: Employed in power management systems for laptops, desktops, and other electronic devices.
4. Lighting Systems: Used in LED drivers and other lighting control systems.
5. Battery Management: Applicable in battery charging and discharging circuits, particularly in portable electronics.
Its low on-resistance and fast switching capabilities make it ideal for these applications.
Package
The BUK9K52-60E is a MOSFET transistor typically packaged in a TO-252 (DPAK) package. This type of surface-mount package is commonly used for medium power applications.
