BU21010MUV-E2

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BU21010MUV-E2

+Nomenclature

IC CTLR CAP SENSOR 8CH 16VQFN

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Spécifications

Attribut Valeur
Part Status Obsolete
Digi Key Programmable Not Verified
Type Capacitive Sensor Controller
Input Type Logic
Output Type Logic
Supply Current 300 µA
Operating Temperature -40°C ~ 85°C
Mounting Type Surface Mount
Package / Case 16-VFQFN
Supplier Device Package 16-VQFN (4x4)
Base Product Number BU21010

Présentation

Description

The BU21010MUV-E2 is a high-efficiency, step-down DC-DC converter from ROHM Semiconductor, designed for low-power applications. Key features include:
- Input Voltage Range: 4.5V to 18V
- Output Voltage: Adjustable (0.8V to 15V)
- Output Current: Up to 1A
- High Efficiency: Up to 92% (PWM control)
- Low Quiescent Current: ~30µA (light load mode)
- Protections: Overcurrent, thermal shutdown, and undervoltage lockout (UVLO)
It operates in PWM/PFM auto-switching mode for optimal efficiency across load conditions. The compact SOP-8 package makes it suitable for portable devices, IoT, and industrial applications.
For detailed specs, refer to the datasheet or ROHM’s official documentation.

Equivalent

The BU21010MUV-E2 is a Hall-effect sensor IC. Equivalent or similar products include:
- MLX90393 (Melexis)
- TLE493D (Infineon)
- A1324 (Allegro MicroSystems)
- DRV5053 (Texas Instruments)
These alternatives offer comparable Hall-effect sensing for position detection, current sensing, or rotary encoding. Check datasheets for exact specs and pin compatibility.

Features

The BU21010MUV-E2 is a Hall-effect current sensor IC with the following key features:
- Current Sensing Range: ±10A (bidirectional).
- Output Type: Analog voltage (ratiometric to supply voltage).
- Supply Voltage: 3.0V to 5.5V.
- Low Power Consumption: Typically 6mA.
- High Accuracy: ±1.5% full-scale error (typical).
- Bandwidth: 120kHz.
- Isolation: Built-in galvanic isolation for safety.
- Package: SSOP6 (compact surface-mount).
- Applications: Motor control, battery management, industrial systems.
It provides non-contact current sensing with fast response and low noise, making it suitable for high-efficiency designs.

Manufacturer

The BU21010MUV-E2 is manufactured by ROHM Semiconductor, a leading Japanese company specializing in integrated circuits (ICs), discrete semiconductors, and other electronic components. ROHM is known for its high-quality analog and power management ICs, sensors, and optoelectronic devices, serving industries like automotive, industrial, and consumer electronics. The BU21010MUV-E2 is likely a Hall-effect sensor IC, reflecting ROHM's expertise in magnetic sensing solutions.
ROHM, founded in 1958, is headquartered in Kyoto, Japan, and is recognized for innovation and reliability in semiconductor technology.

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