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BSS84LT1G
+NomenclatureMOSFET P-CH 50V 130MA SOT23-3
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FabricantSemi - conducteurs
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Pièce fabricant #BSS84LT1G
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Package SOT-23-3
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En stock6051
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 50 V |
| Current - Continuous Drain(Id) @ 25°C | 130mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V |
| Rds On(Max) @ Id Vgs | 10Ohm @ 100mA, 5V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 30 pF @ 5 V |
| Power Dissipation (Max) | 225mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
Présentation
Description
The BSS84LT1G is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-power applications. It is commonly used in electronic circuits where switching and amplification functions are required. Manufactured by ON Semiconductor, the BSS84LT1G features a maximum drain-source voltage (V_DS) of -50V and a continuous drain current (I_D) of -130mA, making it suitable for small to medium power loads.
This MOSFET is housed in a SOT-23 package, which is a small surface-mount package ideal for compact circuit designs. The device's low on-resistance and fast switching capabilities make it efficient for battery-powered devices, DC-DC converters, and load switching applications. The BSS84LT1G is characterized by its low gate charge, which contributes to energy efficiency, especially in portable and handheld devices.
Overall, the BSS84LT1G is valued for its compact size, reliability, and performance in low-power electronic applications, balancing affordability with the necessary specifications for efficient electronic design.
This MOSFET is housed in a SOT-23 package, which is a small surface-mount package ideal for compact circuit designs. The device's low on-resistance and fast switching capabilities make it efficient for battery-powered devices, DC-DC converters, and load switching applications. The BSS84LT1G is characterized by its low gate charge, which contributes to energy efficiency, especially in portable and handheld devices.
Overall, the BSS84LT1G is valued for its compact size, reliability, and performance in low-power electronic applications, balancing affordability with the necessary specifications for efficient electronic design.
Equivalent
Equivalent products to the BSS84LT1G, which is a P-channel MOSFET, include:
1. BSS84 by Vishay/Siliconix
2. ZVP4424 by Diodes Incorporated
3. FDN302Pby ON Semiconductor
4. DMG2305UX by Diodes Incorporated
These components share similar specifications and can often be used as substitutes, but it's important to verify the specific requirements of your application and consult datasheets for compatibility.
1. BSS84 by Vishay/Siliconix
2. ZVP4424 by Diodes Incorporated
3. FDN302Pby ON Semiconductor
4. DMG2305UX by Diodes Incorporated
These components share similar specifications and can often be used as substitutes, but it's important to verify the specific requirements of your application and consult datasheets for compatibility.
Features
The BSS84LT1G is a P-channel MOSFET commonly used in electronic circuits for switching and amplification applications. Key features include:
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of -50V and a continuous drain current (I_D) of around -130mA.
2. R_DS(on): It has a low on-state resistance, which helps in efficient current flow and minimizes power loss, usually around 10 ohms at V_GS = -10V.
3. Package: This MOSFET is available in a small SOT-23 package, making it suitable for compact designs.
4. Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is usually between -0.8V to -2.1V, allowing it to be driven by low voltage levels.
5. Applications: It's often used in load switching, battery-powered systems, and general-purpose switching because of its low voltage threshold and compact size.
6. Temperature Range: It operates efficiently over a wide temperature range, typically from -55°C to 150°C.
These features make the BSS84LT1G ideal for use in portable electronics and low-power applications.
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of -50V and a continuous drain current (I_D) of around -130mA.
2. R_DS(on): It has a low on-state resistance, which helps in efficient current flow and minimizes power loss, usually around 10 ohms at V_GS = -10V.
3. Package: This MOSFET is available in a small SOT-23 package, making it suitable for compact designs.
4. Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is usually between -0.8V to -2.1V, allowing it to be driven by low voltage levels.
5. Applications: It's often used in load switching, battery-powered systems, and general-purpose switching because of its low voltage threshold and compact size.
6. Temperature Range: It operates efficiently over a wide temperature range, typically from -55°C to 150°C.
These features make the BSS84LT1G ideal for use in portable electronics and low-power applications.
Pinout
The BSS84LT1G is a P-channel MOSFET with a pin count of three. It is commonly used for switching applications. The three pins are typically configured as follows:
1. Gate (G): This pin is used to control the on/off state of the MOSFET. Applying a voltage to the gate allows current to flow between the source and drain.
2. Source (S): This is the input pin from which current exits the MOSFET when it is in the 'on' state. For a P-channel MOSFET, the source is usually connected to a higher voltage.
3. Drain (D): This is the output pin where current enters the MOSFET. When the gate voltage is below the source voltage by a certain threshold, the MOSFET turns on, and current flows from the source to the drain.
The BSS84LT1G is typically packaged in a small SOT-23 configuration, suitable for surface-mount technology. It is often used in applications where space is limited and low power consumption is critical.
1. Gate (G): This pin is used to control the on/off state of the MOSFET. Applying a voltage to the gate allows current to flow between the source and drain.
2. Source (S): This is the input pin from which current exits the MOSFET when it is in the 'on' state. For a P-channel MOSFET, the source is usually connected to a higher voltage.
3. Drain (D): This is the output pin where current enters the MOSFET. When the gate voltage is below the source voltage by a certain threshold, the MOSFET turns on, and current flows from the source to the drain.
The BSS84LT1G is typically packaged in a small SOT-23 configuration, suitable for surface-mount technology. It is often used in applications where space is limited and low power consumption is critical.
Manufacturer
The BSS84LT1G is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a company that specializes in semiconductors and offers a wide range of products including power and signal management, logic, discrete, and custom devices for various applications. The company serves diverse markets such as automotive, communications, computing, consumer electronics, industrial, LED lighting, medical, military/aerospace, and power applications. Onsemi focuses on energy-efficient innovations, providing solutions that help reduce global energy use.
Application
The BSS84LT1G is a P-channel MOSFET commonly used in various applications due to its efficiency in switching and amplifying electronic signals. Key application areas include:
1. Power Management: Ideal for battery-powered devices to manage and switch load currents efficiently.
2. Load Switching: Used in circuits to control the power to various components, such as in mobile devices and consumer electronics.
3. DC-DC Converters: Suitable for applications in voltage regulation and conversion processes.
4. Analog Switches: Employed in signal processing to switch between different signal paths.
5. Level Shifting: Used in interfacing different logic levels in mixed-signal circuits.
These applications benefit from its compact size and low ON-resistance.
1. Power Management: Ideal for battery-powered devices to manage and switch load currents efficiently.
2. Load Switching: Used in circuits to control the power to various components, such as in mobile devices and consumer electronics.
3. DC-DC Converters: Suitable for applications in voltage regulation and conversion processes.
4. Analog Switches: Employed in signal processing to switch between different signal paths.
5. Level Shifting: Used in interfacing different logic levels in mixed-signal circuits.
These applications benefit from its compact size and low ON-resistance.
Package
The BSS84LT1G is a P-channel MOSFET transistor packaged in a SOT-23 (Small Outline Transistor) package, commonly used for surface-mount applications in electronic circuits due to its compact size and efficiency.
