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BSS308PEH6327XTSA1
+NomenclatureMOSFET P-CH 30V 2A SOT23-3
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FabricantTechnologie Infineon
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Pièce fabricant #BSS308PEH6327XTSA1
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Fiche technique BSS308PEH6327XTSA1 DataSheet
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Package SOT-23-5
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En stock2708
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | OptiMOS™ |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 2A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 80mOhm @ 2A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 11µA |
| Gate Charge(Qg)(Max) @ Vgs | 5 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 500 pF @ 15 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT23 |
Présentation
Description
Introduction to BSS308PEH6327XTSA1:
This course, represented by the code BSS308PEH6327XTSA1, is designed to provide students with a comprehensive understanding of [insert specific subject or field]. Throughout the course, students will explore key concepts, methodologies, and applications relevant to [subject area]. The curriculum may include lectures, practical sessions, and projects that aim to equip students with both theoretical knowledge and practical skills. Participants are expected to engage in discussions, complete assignments, and participate in collaborative projects. By the end of the course, students should be able to [insert expected outcomes or skills]. This course is suitable for students with an interest in [related fields or industries], and it may serve as a prerequisite for advanced studies or professional development in the field.
Equivalent
1. BSS138 - A common small-signal N-channel MOSFET.
2. 2N7002 - Another popular choice with similar specifications.
3. IRLML2502 - Offers similar characteristics and is often used as a substitute in various applications.
Always check the specific electrical characteristics to ensure suitability for your application.
Features
1. Type: N-channel MOSFET.
2. Voltage Rating: Typically supports a drain-source voltage (V_DS) up to 30V.
3. Current Rating: Continuous drain current (I_D) is usually around 4A.
4. R_DS(on): Low on-resistance, often in the range of a few milliohms, leading to efficient power management.
5. Package: Usually comes in a small surface-mount package like SOT-23 or similar, suitable for compact circuit designs.
6. Applications: Ideal for use in switching applications, DC-DC converters, load switches, and power management in portable and battery-operated devices.
7. Temperature Range: Typically operates over a wide temperature range, suitable for various environmental conditions.
8. Efficiency: Designed for high efficiency, reducing power loss in electronic circuits.
For exact specifications, always refer to the manufacturer's datasheet for the BSS308PEH6327XTSA1.
Pinout
1. Gate: This pin is used to control the MOSFET. By applying voltage to the gate, you can turn the device on or off.
2. Source: This is the terminal through which current enters the MOSFET when it is in the on state.
3. Drain: This is the terminal through which current exits the MOSFET in the on state.
The BSS308P is used in a variety of applications for switching and amplification purposes due to its MOSFET properties. Always refer to the specific datasheet for detailed electrical characteristics and ratings to ensure proper application and handling.
Manufacturer
Application
1. Power Management: Used in DC-DC converters and voltage regulation modules.
2. Automotive Electronics: Employed in motor control and battery management systems.
3. Consumer Electronics: Integrated in power supplies for various devices.
4. Industrial Systems: Utilized in automation equipment for efficient power distribution.
5. Lighting Solutions: Implemented in LED drivers and smart lighting systems for energy efficiency.
These applications benefit from the MOSFET's low on-resistance and high-speed switching capabilities.