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BSS138AKAR
+NomenclatureMOSFET N-CH 60V 200MA TO236AB
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FabricantNexperia USA Inc.
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Pièce fabricant #BSS138AKAR
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En stock4590
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Spécifications
| Attribut | Valeur |
| Supplier | Nexperia USA Inc. |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 200mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 4.5Ohm @ 100mA, 10V |
| Vgs(th)(Max) @ Id | 1.5V @ 250mA |
| Gate Charge(Qg)(Max) @ Vgs | 0.51 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 47 pF @ 30 V |
| Power Dissipation (Max) | 300mW (Ta), 1.06W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-236AB |
Présentation
Description
BSS138AKAR is a small-signal N‑channel enhancement MOSFET in a SOT‑23 package. It’s a variant of the BSS138 family and is widely used for low‑current switching and signal‑level shifting.
Key specs (typical): VDS around 50 V; continuous drain current ~0.18–0.2 A; RDS(on) about 3–6 Ω at VGS = 4.5 V (lower at higher VGS); VGS(th) roughly 0.8–1.5 V; small gate charge; body diode from drain to source.
Common uses: bidirectional level shifting for logic interfaces (e.g., I2C between 3.3 V and 5 V), general small‑signal switching, buffering in compact, low‑power circuits.
Packaging/sourcing: widely available from multiple vendors; AKAR suffix indicates a specific variant/packaging grade. For exact numbers, consult the manufacturer’s datasheet (ROHM/Vishay/others).
Key specs (typical): VDS around 50 V; continuous drain current ~0.18–0.2 A; RDS(on) about 3–6 Ω at VGS = 4.5 V (lower at higher VGS); VGS(th) roughly 0.8–1.5 V; small gate charge; body diode from drain to source.
Common uses: bidirectional level shifting for logic interfaces (e.g., I2C between 3.3 V and 5 V), general small‑signal switching, buffering in compact, low‑power circuits.
Packaging/sourcing: widely available from multiple vendors; AKAR suffix indicates a specific variant/packaging grade. For exact numbers, consult the manufacturer’s datasheet (ROHM/Vishay/others).
Equivalent
Common SOT-23 logic-level N-MOSFET equivalents to BSS138AKAR include:
• 2N7002 (ON Semi/Nexperia)
• FDN306P (Nexperia/Fairchild)
• FDV301N (Diodes Inc.)
• AOZ821 (Alpha & Omega)
• DMN65D0LD (Diodes Inc.)
• NX7002 (Nexperia)
All share similar VDS, ID and gate-threshold specs suitable for level-shifting or low-power switching.
• 2N7002 (ON Semi/Nexperia)
• FDN306P (Nexperia/Fairchild)
• FDV301N (Diodes Inc.)
• AOZ821 (Alpha & Omega)
• DMN65D0LD (Diodes Inc.)
• NX7002 (Nexperia)
All share similar VDS, ID and gate-threshold specs suitable for level-shifting or low-power switching.
Features
BSS138AKAR Features:
- N-channel enhancement-mode MOSFET
- VDS = 60 V; ID ≈ 180 mA; RDS(on) max ≈ 3.5 Ω at VGS = 4 V
- Logic-level gate: VGS(th) ~ 0.8–1.5 V
- Small-signal, fast-switching device with low gate charge
- Suitable for level shifting (e.g., I2C) and general-purpose switching
- Package: SOT-23 3-pin; RoHS-compliant; AKAR variant
- Wide operating temperature: -55°C to +150°C
- Built-in body diode (drain→source)
- N-channel enhancement-mode MOSFET
- VDS = 60 V; ID ≈ 180 mA; RDS(on) max ≈ 3.5 Ω at VGS = 4 V
- Logic-level gate: VGS(th) ~ 0.8–1.5 V
- Small-signal, fast-switching device with low gate charge
- Suitable for level shifting (e.g., I2C) and general-purpose switching
- Package: SOT-23 3-pin; RoHS-compliant; AKAR variant
- Wide operating temperature: -55°C to +150°C
- Built-in body diode (drain→source)
Pinout
Pin count: 3 pins (SOT‑23 package).
Function: BSS138AKAR is an N‑channel enhancement‑mode MOSFET (logic‑level) used for low‑voltage switching, level translation, and general-purpose signal/power switching. The three terminals are Gate (control), Drain, and Source (load/reference).
Function: BSS138AKAR is an N‑channel enhancement‑mode MOSFET (logic‑level) used for low‑voltage switching, level translation, and general-purpose signal/power switching. The three terminals are Gate (control), Drain, and Source (load/reference).
Manufacturer
- Manufacturer: ON Semiconductor (the BSS138 family originated with Fairchild and now is produced by ON Semiconductor).
- What kind of company: A US-based multinational semiconductor company that designs, manufactures, and sells a broad range of discrete devices, power MOSFETs, ICs, sensors, and other electronic components for automotive, industrial, communications, and consumer markets.
- What kind of company: A US-based multinational semiconductor company that designs, manufactures, and sells a broad range of discrete devices, power MOSFETs, ICs, sensors, and other electronic components for automotive, industrial, communications, and consumer markets.
Application
BSS138AKAR is a small-signal N-channel MOSFET (SOT‑23). Typical application areas:
- Bidirectional I2C/open‑drain level shifting between voltage domains.
- Low‑side switching of small loads in embedded/microcontroller circuits.
- General-purpose signal switching and gate control in digital/interface circuitry (clock gating, protection, routing).
- Portable/handheld electronics where a compact, fast switch is needed for sensors and peripherals.
- Bidirectional I2C/open‑drain level shifting between voltage domains.
- Low‑side switching of small loads in embedded/microcontroller circuits.
- General-purpose signal switching and gate control in digital/interface circuitry (clock gating, protection, routing).
- Portable/handheld electronics where a compact, fast switch is needed for sensors and peripherals.
Package
SOT-23 (3-pin) package.
