BSP170PH6327XTSA1

Images à titre indicatif uniquement

BSP170PH6327XTSA1

+Nomenclature

MOSFET P-CH 60V 1.9A SOT223-4

  • FabricantTechnologie Infineon

  • Pièce fabricant #BSP170PH6327XTSA1

  • En stock7877

365 Garantie qualité 24h/24

7*24 Garantie de service 24h/24

90-Garantie après-vente 24h/24

Garantie produit authentique

Spécifications

Attribut Valeur
Series SIPMOS®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 410 pF @ 25 V
Power Dissipation (Max) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4
Package / Case TO-261-4, TO-261AA
Base Product Number BSP170

Présentation

Description

The BSP170PH6327XTSA1 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage applications. It features a low on-resistance and a high switching speed, making it suitable for various electronic circuits, including power management and switching applications. With a maximum drain-source voltage (Vds) rating of 60V and a continuous drain current (Id) rating of 3.5A, it can efficiently handle power loads in compact designs.
The device is housed in a surface-mount package, which facilitates easier integration into circuits and aids in space-saving designs. Its gate threshold voltage (Vgs) allows for low-voltage operation, enhancing its utility in battery-powered devices. Thermal characteristics enable effective heat dissipation, contributing to reliable performance in demanding conditions.
Overall, the BSP170PH6327XTSA1 is a versatile MOSFET that caters to applications in consumer electronics, automotive systems, and industrial equipment due to its robust specifications and efficiency.

Equivalent

The BSP170PH6327XTSA1 is an N-channel MOSFET. Equivalent products include the BS170, 2N7000, and SI2301. It's important to check specifications such as voltage rating, on-resistance, and package type to ensure compatibility. Always consult datasheets for precise parameters before substituting components in your application.

Features

The BSP170PH6327XTSA1 is an N-channel MOSFET featuring low on-resistance, high-speed switching capabilities, and a compact SMD package for efficient circuit design. Key features include:
1. Voltage Ratings: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various applications.
2. Current Ratings: The continuous drain current (I_D) is up to 1.2A, allowing it to handle moderate loads.
3. On-Resistance: Offers a low R_DS(on) of approximately 0.5Ω, ensuring minimal power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is low, enabling easy driving with standard logic levels.
5. Package: It comes in a SOT-23 package, providing a compact footprint for space-constrained applications.
6. Applications: Ideal for low-voltage switching, power management, and signal amplification in consumer electronics, automotive, and industrial systems.
Overall, the BSP170PH6327XTSA1 delivers efficiency and performance in a small package, making it a versatile choice for designers.

Pinout

The BSP170PH6327XTSA1 is an N-channel enhancement mode MOSFET. It typically features a pin count of 3. The pins are designated as follows:
1. Gate (G): This pin controls the operation of the MOSFET. A voltage applied here allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the current enters the MOSFET when it is turned on.
3. Source (S): This terminal allows current to exit the MOSFET when it is conducting.
The device is commonly used in switching applications, such as in power management and signal processing circuits, due to its low on-resistance and fast switching capabilities.

Manufacturer

The BSP170PH6327XTSA1 is manufactured by Nexperia, a company that specializes in the production of discrete, logic, and analogue semiconductors. Nexperia was formed as a spin-off from NXP Semiconductors and has established itself as a key player in the semiconductor industry, providing a wide range of components for various applications, including automotive, industrial, and consumer electronics.
Nexperia focuses on high-volume manufacturing and offers a broad portfolio of products, including transistors, diodes, and integrated circuits. The BSP170 is a specific type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), known for its low on-resistance and fast switching capabilities, making it suitable for various electronic circuits and applications.
Overall, Nexperia is recognized for its commitment to quality, efficiency, and innovation in semiconductor technology, catering to diverse markets and customer needs.

Application

The BSP170PH6327XTSA1 is an N-channel MOSFET primarily used in low-voltage applications such as switching and amplifying signals. Its application areas include power management in consumer electronics, automotive electronics, and industrial equipment. It is suitable for low-side switching in motor control, LED drivers, and as a load switch. Additionally, it is utilized in battery management systems and power supplies for efficient energy conversion and regulation. Its compact design and high efficiency make it ideal for space-constrained applications.

Package

The BSP170PH6327XTSA1 is packaged in a SOT-23 surface mount package.

Produits liés à BSP170PH6327XTSA1