Images à titre indicatif uniquement
BSO612CVGHUMA1
+NomenclatureMOSFET N/P-CH 60V 2A 8-SOIC
-
FabricantTechnologie Infineon
-
Pièce fabricant #BSO612CVGHUMA1
-
Fiche technique BSO612CVGHUMA1 DataSheet
-
Package SOIC-8
-
En stock5452
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | Infineon Technologies,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Bulk |
| Series | SIPMOS® |
| ProductStatus | Obsolete |
| FETType | N and P-Channel |
| FETFeature | Standard |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 3A, 2A |
| RdsOn(Max)@IdVgs | 120mOhm @ 3A, 10V |
| Vgs(th)(Max)@Id | 4V @ 20µA |
| GateCharge(Qg)(Max)@Vgs | 15.5nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 340pF @ 25V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
