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BSH111BKR
+NomenclatureMOSFET N-CH 55V 210MA TO236AB
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FabricantNexperia USA Inc.
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Pièce fabricant #BSH111BKR
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En stock5005
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | Nexperia USA Inc. |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain(Id) @ 25°C | 210mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V |
| Rds On(Max) @ Id Vgs | 4Ohm @ 200mA, 4.5V |
| Vgs(th)(Max) @ Id | 1.3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.5 nC @ 4.5 V |
| Vgs(Max) | ±10V |
| Input Capacitance(Ciss)(Max) @ Vds | 30 pF @ 30 V |
| Power Dissipation (Max) | 302mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-236AB |
Présentation
Description
BSH111BKR is an entry-level course in [subject area] designed to build foundational knowledge and skills for beginners. Through a mix of lectures, discussions, and practical exercises, students explore core concepts, develop critical thinking, and learn to apply basic methods to simple problems. Prerequisites are minimal or none. Assessments typically include short quizzes, written assignments, and a small project. By the end of the course, students should be able to explain key concepts, demonstrate basic techniques, and communicate results clearly, preparing them for more advanced topics in the BSH sequence.