Images à titre indicatif uniquement
BSC034N10LS5
+NomenclatureMOSFETs TRENCH >=100V
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FabricantTechnologie Infineon
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Pièce fabricant #BSC034N10LS5
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Fiche technique BSC034N10LS5 DataSheet
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En stock25492
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Spécifications
| Attribut | Valeur |
| Packaging | Reel |
Présentation
Description
For example, in financial contexts, "BSC034N10LS5" could be a CUSIP (Committee on Uniform Securities Identification Procedures) number, an ISIN (International Securities Identification Number), or another type of identifier. These codes are used to ensure precise identification of securities, facilitating trading and settlement.
However, without specific context or confirmation, it's challenging to determine the exact nature or details of "BSC034N10LS5." If you are dealing with this code in a financial setting, it’s advisable to refer to a financial database or ask a financial advisor for precise information about this identifier and the security it represents.
If this code pertains to a different context, please provide additional details to allow for a more accurate identification or explanation.
Equivalent
1. IRL540N by Vishay or Infineon – Similar specifications, though check specific parameters.
2. STP55NF06 by STMicroelectronics – Different package, similar characteristics.
3. FQP30N06L by ON Semiconductor – Matches in certain applications.
Make sure to verify key parameters like voltage, current ratings, RDS(on), and package type to ensure compatibility in your application.
Features
1. N-Channel MOSFET: It is an N-channel enhancement mode MOSFET, which means it requires a positive voltage to conduct.
2. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of up to 100V and a continuous drain current (I_D) of approximately 34A, enabling it to handle significant power loads.
3. Low On-Resistance: The device features a low on-resistance (R_DS(on)), which reduces power loss and improves efficiency, particularly beneficial in high-frequency switching applications.
4. SO8 Package: It comes in a compact SO8 package, making it suitable for space-constrained applications.
5. Fast Switching: The MOSFET is designed for fast switching speeds, which helps in reducing switching losses and improving overall device efficiency.
6. Thermal Performance: It offers robust thermal performance, which aids in maintaining reliability under high power conditions.
These features make the BSC034N10LS5 ideal for power management in automotive, industrial, and consumer electronics applications.
Pinout
1. Gate (G): This is the control terminal responsible for turning the MOSFET on or off. A voltage applied to the gate regulates the flow of current between the drain and source.
2. Drain (D): This is the terminal through which the main current flows from the circuit supply to the load.
3. Source (S): This is the terminal through which the current exits the MOSFET, completing the circuit.
The BSC034N10LS5 is used in various applications such as power supply circuits, motor drivers, and other systems requiring efficient power switching. It is designed to handle high current and voltage, making it suitable for industrial and consumer electronics.