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BAS70-04LT1G
+NomenclatureDIODE ARRAY SCHOTTKY 70V SOT23-3
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FabricantSemi - conducteurs
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Pièce fabricant #BAS70-04LT1G
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Package SOT23-3
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En stock5499
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Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| DiodeConfiguration | 1 Pair Series Connection |
| DiodeType | Schottky |
| Voltage-DCReverse(Vr)(Max) | 70 V |
| Current-AverageRectified(Io)(perDiode) | 100mA (DC) |
| Voltage-Forward(Vf)(Max)@If | 1 V @ 15 mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Current-ReverseLeakage@Vr | 10 µA @ 70 V |
| OperatingTemperature-Junction | -55°C ~ 150°C |
| MountingType | Surface Mount |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
Présentation
Description
Key specifications include:
- Low Forward Voltage Drop: This characteristic minimizes power loss and improves efficiency, especially in low-voltage applications.
- Fast Switching Speed: Ideal for high-frequency applications due to reduced charge storage.
- Reverse Voltage: Typically around 70V, allowing for use in various voltage environments.
- Current Rating: Generally around 200 mA, suitable for low to moderate current applications.
Common applications for the BAS70-04LT1G include voltage clamping, protection of circuits from voltage spikes, and signal rectification in power supplies and RF applications. Its small package size makes it ideal for compact circuit designs where space is a premium.
Equivalent
1. BAT54S- A general-purpose Schottky diode with similar specifications.
2. BAS40-04- Another Schottky diode array suitable for low-voltage applications.
3. SD103AWS - Schottky diode with comparable characteristics.
4. 1PS79SB70 - Offers similar performance in small-signal applications.
Ensure to verify the specifications such as voltage, current ratings, and package to confirm compatibility for your specific application.
Features
1. Low Forward Voltage Drop: This allows for efficient operation, making it suitable for low-voltage applications.
2. High Switching Speed: The diode offers fast switching capabilities, ideal for high-frequency applications.
3. Dual Diode Configuration: It contains two diodes in a single package, configured in a common cathode arrangement, which is beneficial for space-saving on circuit boards.
4. Low Capacitance: This feature minimizes the impact on high-speed data lines and reduces signal distortion.
5. Small SOT-23 Package: The compact package size supports modern miniaturized designs and offers easy integration into space-constrained environments.
6. Reverse Voltage: The diode is rated for a reverse voltage of typically up to 70V.
7. Forward Current: It supports a forward continuous current up to approximately 70mA.
These features make the BAS70-04LT1G suitable for applications in RF systems, signal processing, and power management where efficient, high-speed diode performance is required.
Pinout
1. Pin 1 (Anode of Diode 1) - This is the anode terminal of the first diode in the series.
2. Pin 2 (Common Cathode) - This serves as the cathode for both diodes in the series.
3. Pin 3 (Anode of Diode 2) - This is the anode terminal of the second diode.
The primary function of the BAS70-04LT1G is to facilitate fast switching with a low forward voltage drop, making it suitable for applications such as voltage clamping, reverse polarity protection, and signal line protection. It is also used in RF applications due to its low capacitance and fast recovery time.
Manufacturer
Application
1. High-Speed Switching: Ideal for applications requiring fast switching speeds due to its low forward voltage drop and fast recovery time.
2. Signal Rectification: Useful in small-signal rectification for RF and microwave applications.
3. Clamping and Protection Circuits: Employed to protect sensitive components from voltage spikes and transients.
4. Voltage Multipliers: Used in circuits that require voltage boosting.
5. Mixing and Detection in RF Circuits: Effective in RF mixing and detection due to its low capacitance and high frequency response.
These features make the BAS70-04LT1G suitable for consumer electronics, telecommunications, and automotive applications.