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AT45DB041D-SU
+NomenclatureIC FLASH 4MBIT SPI 66MHZ 8SOIC
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FabricantTechnologie adesto
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Pièce fabricant #AT45DB041D-SU
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Package SOIC-8
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En stock5682
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Spécifications
| Attribut | Valeur |
| Package / Case | Tube |
| Part Status | Obsolete |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH |
| Memory Size | 4Mb (264 Bytes x 2048 pages) |
| Memory Interface | SPI |
| Clock Frequency | 66 MHz |
| Write Cycle Time - Word Page | 4ms |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
Présentation
Description
Key features of the AT45DB041D-SU include dual and quad input/output modes for faster data rates, a built-in 256-byte SRAM data buffer for improved write performance, and advanced security measures like sector locking to protect important data. It also includes Automatic Address Increment (AAI) for streamlined page programming.
The memory is ideal for applications requiring reliable and flexible data storage, such as consumer electronics, industrial automation, and embedded systems. Its low power consumption and wide voltage range (2.5V to 3.6V) make it suitable for battery-operated devices. The device is available in a small 8-pin SOIC package, making it easy to integrate into space-constrained designs.
Equivalent
1. Winbond W25Q40EW - A 4Mb serial flash memory.
2. Macronix MX25L4006E - A 4Mb serial flash memory.
3. Microchip SST25VF040B - A 4Mb serial flash memory.
4. ISSI IS25LP040D - A 4Mb serial flash memory.
These chips offer similar storage capacities and operate with SPI interfaces, making them suitable substitutes in applications requiring 4Mb serial flash memory.
Features
1. Memory Architecture: Organized into 2048 pages of 264 bytes each, with additional features for optimized read and write operations.
2. Interface: Supports a fast SPI serial interface with clock speeds up to 66 MHz, making it suitable for high-speed data transfers.
3. Dual-Voltage Operation: Operates at dual voltage levels ranging from 2.7V to 3.6V for flexibility in various applications.
4. Data Protection: Includes software-controlled protection features with sector and block-level protection options.
5. Endurance and Reliability: Offers 100,000 write/erase cycles per sector and data retention of 20 years, ensuring long-term reliability.
6. Deep Power-Down Mode: Minimizes power consumption by reducing typical current draw to less than 1 µA.
7. Security: Provides a unique device ID for secure identification and authentication purposes.
8. Package: Available in an 8-pin SOIC package, making it suitable for space-constrained designs.
These features make the AT45DB041D-SU ideal for applications requiring reliable, high-speed, and non-volatile memory storage.
Pinout
1. CS (Chip Select): Activates the device when low; enables data to be exchanged.
2. SCK (Serial Clock): Provides the clock signal for data transactions.
3. SI (Serial Input): Accepts data or commands from the microcontroller.
4. SO (Serial Output): Outputs data to the microcontroller.
5. WP (Write Protect): Protects certain sections of memory from being written over.
6. RESET: Resets the device, returning it to a default state.
7. GND (Ground): Reference voltage for the device.
8. VCC (Power Supply): Provides power to the device.
These pins facilitate communication via SPI (Serial Peripheral Interface), allowing the device to perform read, write, and erase operations efficiently.