AS4C16M32MD1-5BCN

Images à titre indicatif uniquement

AS4C16M32MD1-5BCN

+Nomenclature

IC DRAM 512MBIT PARALLEL 90FBGA

  • FabricantAlliance Memory, Inc.

  • Pièce fabricant #AS4C16M32MD1-5BCN

  • Package VFBGA-90

  • En stock3698

365 Garantie qualité 24h/24

7*24 Garantie de service 24h/24

90-Garantie après-vente 24h/24

Garantie produit authentique

Spécifications

Attribut Valeur
Supplier Alliance Memory, Inc.
Package / Case Tray
Part Status Active
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - Mobile LPDDR
Memory Size 512Mb (16M x 32)
Memory Interface Parallel
Clock Frequency 200 MHz
Write Cycle Time - Word Page 15ns
Access Time 5 ns
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -25°C ~ 85°C (TJ)
Mounting Type Surface Mount

Présentation

Description

AS4C16M32MD1-5BCN is a high-density memory device from Alliance Memory (AS4C family). It provides 16M × 32-bit organization, i.e., 512 Mbits total storage, with a wide 32-bit data path for parallel access. Used as external RAM in embedded systems, microcontrollers, or SoCs needing a large, wide-memory interface. The “-5” indicates the speed grade, and “-BCN” encodes packaging and temperature rating (industrial options are common). It typically operates at standard memory voltages (often around 3.3V) and is offered in a surface-mount package suitable for consumer and industrial apps. Like other parallel memory devices, it requires a memory controller to manage addressing, timing, and (if applicable) refresh. For exact electrical specs, timing parameters, pinout, and operating conditions, consult the official datasheet for AS4C16M32MD1-5BCN.

Equivalent

Equivalents depend on the exact device type (AS4C16M32MD1 is Alliance Memory 16M x 32 organization; speed grade and voltage vary). To give direct cross references, please confirm:
1) memory type (PSRAM or SDRAM),
2) operating voltage (e.g., 3.3V or 1.8V),
3) package,
4) acceptable manufacturers (Micron, ISSI, Winbond, etc.).
Once confirmed, I’ll provide cross-listed part numbers.

Features

AS4C16M32MD1-5BCN features (concise):
- Organization: 16M x 32-bit SDRAM (64 MB total)
- Synchronous memory with burst read/write capability
- 32-bit data bus; supports standard SDRAM timing and bursts
- Multi-bank architecture with auto-refresh and self-refresh
- Programmable latency options (CAS latency) for performance tuning
- Low-power modes including deep power-down
- Speed grade indicated by the suffix (5 indicates a specific high-speed rating)
- Packaging options and RoHS-compliant (Pb-free) as offered by Alliance Memory
Note: For exact electrical specs (voltage, timing, refresh, package type, temperature range), refer to the official datasheet.

Pinout

Pin count: 68 pins (typical package; variants may exist in other package types).
Function: 16M x 32-bit (512 Mbit) synchronous DRAM memory with a 32‑bit data bus. Provides address/command inputs, bank select inputs, data I/O (DQ0–DQ31), and standard control signals (CS, CK, CK#, CKE, WE#, OE#) for synchronous operation.

Manufacturer

- Manufacturer: Alliance Memory, Inc.
- Company type: A fabless semiconductor company that designs and markets memory ICs (SRAM/DRAM/PSRAM) for embedded and industrial applications.

Application

AS4C16M32MD1-5BCN is a high-density memory device (16M x 32-bit). Common application areas include:
- Embedded systems and microcontroller-based designs
- Digital consumer electronics (TVs, set-top boxes, cameras, DVD/Blu-ray players)
- Automotive electronics (infotainment, instrument clusters)
- Industrial controls and instrumentation
- Networking/telecom equipment for buffering and data paths
- Graphics/video buffering and caching in embedded GPUs or DSPs
Used wherever a wide, fast memory is required in electronic systems.

Package

FBGA (fine-pitch Ball Grid Array) package.

Produits liés à AS4C16M32MD1-5BCN