APT30GP60BDQ1G

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APT30GP60BDQ1G

+Nomenclature

IGBT PT 600V 100A TO247

  • FabricantTechnologie de micropuce

  • Pièce fabricant #APT30GP60BDQ1G

  • En stock3441

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Spécifications

Attribut Valeur
Series POWER MOS 7®
PartStatus Active
IGBTType PT
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 100 A
Vce(on)(Max)@Vge,Ic 2.7V @ 15V, 30A
Power-Max 463 W
SwitchingEnergy 260µJ (on), 250µJ (off)
InputType Standard
GateCharge 90 nC
Td(on/off)@25°C 13ns/55ns
TestCondition 400V, 30A, 5Ohm, 15V
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-247-3
SupplierDevicePackage TO-247 [B]
BaseProductNumber APT30GP60
Current-CollectorPulsed(Icm) 120 A

Présentation

Description

APT30GP60BDQ1G is a high-performance N-channel MOSFET designed for power management applications. It features a low on-resistance, enabling efficient switching and reducing heat generation during operation. This device typically supports high voltage and current, making it suitable for various applications, including power supplies, motor control, and DC-DC converters.
The APT30GP60BDQ1G offers fast switching times, which enhances overall efficiency in power conversion systems. It is housed in a durable package that facilitates thermal management, ensuring reliable operation under demanding conditions. The MOSFET's gate threshold voltage is optimized for compatibility with standard drive voltages, allowing for easy integration into existing circuit designs.
Overall, the APT30GP60BDQ1G stands out for its balance of performance, efficiency, and reliability, making it a popular choice among engineers in the field of power electronics.

Equivalent

The APT30GP60BDQ1G is an N-channel MOSFET. Equivalent products include the APT30GP60BDG, IRF840, STP30NF60, and FQP30N60. When selecting an equivalent, ensure to match key specifications like voltage rating, current handling, and gate threshold voltage to ensure compatibility in your application. Always consult the datasheets for precise comparisons.

Features

The APT30GP60BDQ1G is a power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of 60V, making it suitable for medium voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 30A, allowing for substantial load handling.
3. Low R_DS(on): It features a low on-resistance, enabling reduced conduction losses and improved thermal performance, which is crucial for efficiency.
4. Fast Switching Speed: The device is optimized for rapid switching, beneficial in high-frequency applications.
5. Thermal Performance: It comes in a TO-220 package, providing effective heat dissipation, which enhances reliability.
6. Gate Threshold Voltage: With a low gate threshold voltage, it ensures easier drive requirements for various control circuits.
These features make the APT30GP60BDQ1G suitable for applications in power supplies, motor drives, and other high-performance electronic systems.

Pinout

The APT30GP60BDQ1G is a N-channel MOSFET designed for power applications. It features a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin turns the device on or off.

2. Drain (D): This is the output pin where current flows out of the MOSFET when it is on. It connects to the load in the circuit.
3. Source (S): This pin is connected to the ground or negative side of the power supply. Current enters the MOSFET through this pin.
The APT30GP60BDQ1G is capable of handling high voltage and current, making it suitable for various applications such as switching regulators and motor control.

Manufacturer

The APT30GP60BDQ1G is manufactured by Advanced Power Technology, a subsidiary of ON Semiconductor. ON Semiconductor is a global provider of semiconductor solutions, focusing on energy-efficient products and technologies. The company designs, manufactures, and markets a broad range of semiconductor components, including power management, analog, and mixed-signal devices, which serve various industries such as automotive, industrial, and consumer electronics.
The APT30GP60BDQ1G itself is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is utilized in power conversion applications, showcasing ON Semiconductor's commitment to providing reliable and high-performance electronic components. The focus of the company is on innovation and sustainability, aiming to help customers achieve their design goals while minimizing energy consumption and environmental impact.

Application

The APT30GP60BDQ1G is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for applications in power electronics. Key application areas include:
1. Industrial Motor Drives: Used in variable frequency drives for efficient motor control.
2. Renewable Energy: Ideal for inverters in solar and wind energy systems.
3. Power Supplies: Utilized in switch-mode power supplies for efficient energy conversion.
4. Welding Equipment: Employed in arc welding power sources for precise control.
5. HVAC Systems: Applied in variable speed drives for heating, ventilation, and air conditioning systems.
Its robust performance and efficiency make it suitable for demanding applications in various sectors.

Package

The APT30GP60BDQ1G is packaged in a TO-220 form factor. This package type is known for its robust thermal performance and is commonly used in power applications, allowing for effective heat dissipation and easy mounting on heatsinks.

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