AP30P30Q

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AP30P30Q

+Nomenclature

  • FabricantAllpower (Shenzhen full Power Semiconductor)

  • Pièce fabricant #AP30P30Q

  • Fiche technique AP30P30Q DataSheet

  • En stock19256

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Spécifications

Attribut Valeur
Manufacturer ALLPOWER(ShenZhen Quan Li Semiconductor)
Package PDFN3333-8
Operating Temperature -55℃~+150℃
Current - Continuous Drain(Id) 30A
Pd - Power Dissipation 1.5W
Drain to Source Voltage 30V
RDS(on) 10mΩ@5V,5A
Gate Threshold Voltage (Vgs(th)@Id) 800mV
Type 1 piece P-channel
Gate Charge(Qg) 35nC@10V
Input Capacitance(Ciss@Vds) 2.15nF@10V
Reverse Transfer Capacitance (Crss@Vds) 320pF@10V

Présentation

Equivalent

The AP30P30Q is a P-channel MOSFET. Equivalent or similar products include:
- IRF9Z34N (International Rectifier)
- FQP30P06 (Fairchild/ON Semiconductor)
- STP30PF10 (STMicroelectronics)
- IRLML6401 (Infineon)
These alternatives offer comparable voltage, current, and power ratings. Always verify datasheet specifications for exact compatibility.

Features

The AP30P30Q is a high-performance power module with the following key features:
- Voltage & Current: 30A continuous current, 30V maximum voltage.
- Efficiency: High efficiency (up to ~95%) with low power loss.
- Thermal Management: Integrated heat sink for effective cooling.
- Protections: Overcurrent, overvoltage, overtemperature, and short-circuit protection.
- Compact Design: Small footprint for space-constrained applications.
- Wide Operating Temp.: Typically -40°C to +125°C.
- Applications: Used in industrial automation, telecom, and power supplies.
It offers reliable, stable power delivery with robust safety features.

Package

The AP30P30Q is a power MOSFET package, typically in a TO-252 (DPAK) or similar surface-mount type. It features three pins (gate, drain, source) and is designed for high-efficiency power switching applications. The package offers good thermal performance and is commonly used in DC-DC converters, motor drives, and power supplies. Exact specs may vary by manufacturer—check datasheets for details.

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