AON5820

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AON5820

+Nomenclature

MOSFET 2N-CH 20V 10A 6DFN

  • FabricantAlpha Omega Semiconductor GmbH.

  • Pièce fabricant #AON5820

  • Fiche technique AON5820 DataSheet

  • En stock4863

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Spécifications

Attribut Valeur
Part Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 10A
Rds On (Max) @ Id, Vgs 9.5mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1510pF @ 10V
Power - Max 1.7W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-WFDFN Exposed Pad
Supplier Device Package 6-DFN-EP (2x5)
Base Product Number AON582

Présentation

Description

AON5820 is a high-performance, N-channel MOSFET designed for various applications, including power management, DC-DC converters, and motor control. It features low on-resistance (R_DS(on)) for improved efficiency, enabling reduced power losses and enhanced thermal performance. With a maximum drain-source voltage (V_DS) rating suitable for many industrial applications, AON5820 supports high switching frequencies, making it ideal for fast-response circuits.
The device typically comes in a compact surface-mount package, facilitating easy integration onto PCBs. Its robust specifications include a high current rating and resistance to thermal and electrical stress, ensuring reliable operation in demanding environments. AON5820 is engineered for compatibility with modern power design needs, emphasizing energy efficiency and reliability. Applications range from consumer electronics to automotive systems, where effective power handling and minimal heat generation are critical.
Overall, AON5820 serves as a versatile component for engineers looking to enhance the performance and efficiency of their electronic designs.

Equivalent

The AON5820 chip, a low-power Bluetooth Low Energy (BLE) SoC, has several equivalent products including the Nordic Semiconductor nRF52810, nRF52832, and nRF52840, as well as the Dialog Semiconductor DA14531 and DA14585. These alternatives offer similar low-power Bluetooth features and performance suitable for IoT applications.

Features

AON5820 is a high-performance N-channel MOSFET designed for various applications, including DC-DC converters and power management systems. Key features include:
1. Low On-Resistance (RDS(on)): It offers low RDS(on) at a gate voltage of 10V, enhancing efficiency in power applications.
2. High-Voltage Rating: The device supports high voltage operations, typically rated for 30V, making it versatile for various circuits.
3. Fast Switching Speed: The AON5820 provides rapid switching capabilities, reducing transition losses and improving overall system efficiency.
4. Thermal Performance: It has a robust thermal performance, with a relatively low thermal resistance, allowing for effective heat dissipation.
5. Compact Package: Available in a compact SO-8 package, it is suitable for space-constrained designs.
These features make the AON5820 an excellent choice for applications requiring efficient power management and high reliability.

Pinout

The AON5820 is a highly integrated power management IC (PMIC) designed for low-power applications. It typically features a 16-pin package, which includes various functional pins for power management tasks. The main functions include:
1. Buck Converter: Converts a higher input voltage to a regulated lower output voltage.
2. LDOs (Low Dropout Regulators): Provides additional regulated voltages for powering different components.
3. Enable/Shutdown Control: Allows the IC to be enabled or disabled, helping in power savings during inactive states.
4. Power Good Indicator: Signals when the output is stable and within specified limits.
5. Input and Output Capacitor Connections: For stability and performance enhancement.
The specific pin assignments can vary based on the manufacturer’s specifications, so consult the datasheet for detailed pin function and layout.

Manufacturer

The AON5820 is manufactured by AOS (Alpha & Omega Semiconductor). AOS is a semiconductor company that specializes in designing and manufacturing power semiconductor devices, primarily focusing on products such as MOSFETs, IGBTs, and diodes. The company serves various markets, including computing, consumer electronics, automotive, and industrial applications. Founded in 2000 and headquartered in Sunnyvale, California, AOS aims to provide innovative solutions for energy efficiency and performance in electronic designs. Their expertise in power management and delivery has positioned them as a key player in the semiconductor industry.

Application

AON5820 is a high-performance N-channel MOSFET primarily used in applications such as DC-DC converters, power management systems, and battery management circuits. Its low on-resistance and high-speed switching capabilities make it suitable for use in power supplies, telecom equipment, and automotive applications. Additionally, it is utilized in industrial automation and electric vehicle power systems, enhancing efficiency and thermal performance. Overall, AON5820 serves various roles in applications requiring efficient power conversion and management.

Package

The AON5820 is available in a SO-8 (small outline) package type, which is a compact, surface-mount format. This package design facilitates efficient thermal performance and ease of handling in various electronic applications.

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