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AO4419
+NomenclatureMOSFET P-CH 30V 9.7A 8SOIC
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FabricantAlpha Omega Semiconductor GmbH.
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Pièce fabricant #AO4419
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Fiche technique AO4419 DataSheet
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En stock14031
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Spécifications
| Attribut | Valeur |
| Supplier | Alpha & Omega Semiconductor Inc. |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 9.7A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 20mOhm @ 9.7A, 10V |
| Vgs(th)(Max) @ Id | 2.7V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 32 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1900 pF @ 15 V |
| Power Dissipation (Max) | 3.1W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
Présentation
Description
Clinical trials have focused on its use alongside radiation therapy to protect healthy tissue without compromising the treatment's efficacy against tumors. The goal is to enhance the therapeutic index of radiation therapy by reducing mucositis and other inflammation-related side effects commonly experienced by patients undergoing treatment. AO4419's potential benefits make it a promising adjunct in cancer therapy, aimed at improving patient quality of life and treatment outcomes.
Equivalent
Features
1. P-Channel MOSFET: It is designed to conduct when a negative voltage is applied to the gate relative to the source, making it suitable for high-side switching applications.
2. Low On-Resistance: Offers a low R_DS(on) (drain-source on-resistance), which ensures minimal power loss and efficient performance.
3. High Current Capability: Can handle significant continuous drain current, making it suitable for power applications.
4. Voltage Rating: Typically has a drain-source voltage rating that allows it to be used in moderate voltage applications.
5. Compact Package: Often available in a small SMD package, allowing for space-saving designs on PCBs.
6. Thermal Efficiency: Designed for efficient heat dissipation, contributing to reliable performance in various environmental conditions.
These features make the AO4419 ideal for use in power management, load switching, and voltage regulation tasks in consumer electronics and other devices.
Pinout
1. Pin 1 (Source 1 - S1): Source terminal for the first MOSFET.
2. Pin 2 (Gate 1 - G1): Gate terminal for the first MOSFET, used to control the device.
3. Pin 3 (Drain 1 - D1): Drain terminal for the first MOSFET.
4. Pin 4 (Drain 1 - D1): Connected internally to Pin 3, serving as an additional drain terminal for the first MOSFET.
5. Pin 5 (Drain 2 - D2): Drain terminal for the second MOSFET.
6. Pin 6 (Drain 2 - D2): Connected internally to Pin 5, serving as an additional drain terminal for the second MOSFET.
7. Pin 7 (Gate 2 - G2): Gate terminal for the second MOSFET, used to control the device.
8. Pin 8 (Source 2 - S2): Source terminal for the second MOSFET.
The AO4419 is used for switching and amplification in circuits and provides efficient power management in various electronic devices.