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70V659S12DRGI
+NomenclatureIC SRAM 4.5MBIT PARALLEL 208PQFP
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FabricantRenesas Electronics, États - Unis
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Pièce fabricant #70V659S12DRGI
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Package PQFP-208
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En stock1522
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Spécifications
| Attribut | Valeur |
| Package / Case | Tray |
| Part Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Size | 4.5Mb (128K x 36) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 12ns |
| Access Time | 12 ns |
| Voltage - Supply | 3.15V ~ 3.45V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Présentation
Description
Key specifications of the 70V659S12DRGI include a 3.3V power supply, 12 ns cycle time, and a 512K x 36 memory organization. It also supports common dual-port memory functions like semaphore flags, which help in managing access control between the two ports. The device is housed in a 256-ball, fine-pitch ball grid array (FBGA) package, offering a compact form factor suitable for space-constrained applications.
Overall, the 70V659S12DRGI is designed for applications that demand fast and reliable memory access, providing a robust solution for various high-performance computing environments.
Equivalent
Features
1. Density and Configuration: It typically offers a high memory density, often organized in a 64K x 72-bit configuration, suitable for data-intensive applications.
2. Speed: The device supports fast access times, often around 12 ns, facilitating rapid data retrieval and processing.
3. Synchronous Operation: It operates synchronously with the system clock, ensuring precise timing and coordination with the CPU or other control units.
4. Low Power Consumption: Designed to be energy-efficient, making it suitable for battery-powered and energy-conscious applications.
5. 3.3V Power Supply: Operates on a 3.3V power supply, compatible with modern low-voltage systems.
6. Advanced Features: May support features like burst read/write operations, pipelined or flow-through mode, and sleep mode for reduced power usage when idle.
7. Package Type: Typically available in a compact and reliable package, such as TQFP, suitable for various applications.
These features make it a versatile choice for networking, telecommunications, and other high-speed data environments.
Pinout
Key functions of the 70V659S12DRGI include:
1. Simultaneous Read/Write Access: Allows two ports to access the memory simultaneously, enabling both reading and writing of data from/to the memory banks.
2. High-Speed Operation: The SRAM provides high-speed data access and transfer capabilities, crucial for real-time processing applications.
3. Built-in Arbitration Logic: Manages access conflicts when both ports attempt to access the same memory location, ensuring data integrity and reliability.
4. Flexible Addressing: Supports a wide range of addressing modes and configurations, making it adaptable to various system architectures.
Overall, the 70V659S12DRGI is used in systems where fast and efficient data transfer between two processors or subsystems is necessary.
Manufacturer
Application
1. Networking Equipment: Used in routers and switches for buffering and data processing.
2. Telecommunications: Supports high-speed data transfer in base stations and communication infrastructure.
3. Industrial Automation: Facilitates real-time data processing in control systems.
4. Avionics and Defense: Supports mission-critical applications requiring reliable and fast data storage.
5. Medical Imaging: Enhances fast data acquisition and processing in diagnostic equipment.
These applications benefit from its low latency and high-speed performance.