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2SC5824T100R
+NomenclatureTRANS NPN 60V 3A MPT3
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FabricantROM
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Pièce fabricant #2SC5824T100R
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Fiche technique 2SC5824T100R DataSheet
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Package TO-243AA
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En stock1909
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 3 A |
| Voltage - Collector Emitter Breakdown(Max) | 60 V |
| Vce Saturation(Max) @ Ib Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff(Max) | 1µA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 180 @ 100mA, 2V |
| Power - Max | 2 W |
| Frequency - Transition | 200MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
Présentation
Description
Key specifications of the 2SC5824T100R include a collector-emitter voltage (V_ceo) and collector current (I_c) rating that defines its operational limits, ensuring reliable performance in standard conditions. This transistor is often chosen for its balance between performance characteristics and cost-effectiveness.
The 2SC5824T100R is frequently employed in consumer electronics, industrial devices, and other applications where efficient amplification or switching is required. Its small size and versatility make it a popular choice among engineers and designers looking to optimize their circuit designs while maintaining functionality and reliability.
Equivalent
Features
1. High Frequency: It is suitable for RF amplification, making it ideal for applications in RF circuits.
2. Low Noise: The transistor offers low noise characteristics, which is crucial for maintaining signal integrity in high-frequency applications.
3. High Gain: It provides substantial current gain, enhancing its performance in amplification tasks.
4. Compact Size: The device is available in a small, leaded package, which is beneficial for space-saving in circuit designs.
5. Thermal Stability: It is designed to maintain stable performance over a range of temperatures, ensuring reliability.
6. Saturation Performance: The transistor features low saturation voltage, which contributes to efficient operation.
These features make the 2SC5824T100R a suitable choice for use in various electronic and communication applications that require efficient and reliable RF amplification.
Pinout
1. Pin 1 (Base): This is the control pin of the transistor. By applying a small current to the base, you can control a larger current flowing between the collector and emitter.
2. Pin 2 (Collector): This pin is the output of the transistor. When the base is activated, current flows from the collector to the emitter.
3. Pin 3 (Emitter): This is the return path for the current flowing through the collector.
The 2SC5824 is used in various switching and amplification applications due to its ability to handle moderate power levels, making it suitable for a wide range of electronic devices. The specific pin configuration may vary slightly depending on the manufacturer, so it's always best to consult the datasheet for precise details.