Images à titre indicatif uniquement
2SA812B-T1B-AT
+Nomenclature2SA812B-T1B-AT - PNP SILICON EPI
-
FabricantRenesas ÉLECTRONIQUE
-
Pièce fabricant #2SA812B-T1B-AT
-
Package TO-236-3
-
En stock5169
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Part Status | Obsolete |
| Transistor Type | PNP |
| Current - Collector(Ic)(Max) | 100 mA |
| Voltage - Collector Emitter Breakdown(Max) | 50 V |
| Vce Saturation(Max) @ Ib Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff(Max) | 100nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 90 @ 1mA, 6V |
| Power - Max | 200 mW |
| Frequency - Transition | 180MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
