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2SA1360-Y
+NomenclatureBipolar Transistors - BJT TO126 PLS PLN-N,DISCON(07-10)/PHASE-OUT(10-01)/OBSOLETE(10-04),
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FabricantToshiba
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Pièce fabricant #2SA1360-Y
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Fiche technique 2SA1360-Y DataSheet
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En stock23292
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Spécifications
| Attribut | Valeur |
Présentation
Description
- Type: PNP bipolar junction transistor (BJT)
- Voltage Ratings: VCEO = -50V, VEBO = -5V
- Current Ratings: IC = -1.5A (max), IB = -0.1A
- Power Dissipation: PC = 1W (max)
- Gain (hFE): 60–320 (varies by suffix code)
- Package: TO-92 (compact through-hole)
Commonly used in audio amplifiers, signal processing, and low-power switching circuits, the 2SA1360-Y offers moderate speed and reliable performance. It is often paired with complementary NPN transistors (e.g., 2SC3423).
Note: Check datasheets for exact specifications, as parameters like hFE may vary by manufacturer. Replacements (e.g., 2SA1015) should match electrical characteristics.
Features
- Type: PNP bipolar junction transistor (BJT)
- Voltage Ratings:
- Collector-Base Voltage (VCBO): -50V
- Collector-Emitter Voltage (VCEO): -50V
- Emitter-Base Voltage (VEBO): -5V
- Current Ratings:
- Collector Current (IC): -1.5A
- Base Current (IB): -0.5A
- Power Dissipation (PC): 1W
- DC Current Gain (hFE): 60–320 (depending on conditions)
- Operating Temperature: -55°C to +150°C
- Package: TO-92 (compact plastic package)
Commonly used in amplification, switching, and driver circuits due to its moderate power handling and high gain. Suitable for low-to-medium power applications.