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2N7002NXBKR
+NomenclatureMOSFET N-CH 60V 270MA TO236AB
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FabricantNexperia USA Inc.
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Pièce fabricant #2N7002NXBKR
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Fiche technique 2N7002NXBKR DataSheet
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En stock18997
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Spécifications
| Attribut | Valeur |
| Supplier | Nexperia USA Inc. |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 270mA (Ta), 330mA (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V |
| Rds On(Max) @ Id Vgs | 2.8Ohm @ 200mA, 10V |
| Vgs(th)(Max) @ Id | 2.1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 1 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 23.6 pF @ 10 V |
| Power Dissipation (Max) | 310mW (Ta), 1.67W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-236AB |
Présentation
Description
The 2N7002NXBKR is a type of N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) commonly used in electronic circuits for switching and amplification purposes. It is a small, surface-mount device that belongs to the 2N7002 series, known for its efficiency and reliability in low-power applications.
Key features of the 2N7002NXBKR include a maximum drain-source voltage (V_DS) of 60 volts and a continuous drain current (I_D) of up to 300 mA. It has a low threshold voltage, making it suitable for interfacing with low-voltage logic levels. The device is typically packaged in a SOT-23 configuration, which is compact and ideal for space-constrained designs.
This MOSFET is widely used in applications such as signal switching, battery-powered devices, and power management systems, thanks to its fast switching speed and low on-resistance (R_DS(on)). Its versatility makes it a popular choice for engineers and designers working on a variety of electronic projects.
Key features of the 2N7002NXBKR include a maximum drain-source voltage (V_DS) of 60 volts and a continuous drain current (I_D) of up to 300 mA. It has a low threshold voltage, making it suitable for interfacing with low-voltage logic levels. The device is typically packaged in a SOT-23 configuration, which is compact and ideal for space-constrained designs.
This MOSFET is widely used in applications such as signal switching, battery-powered devices, and power management systems, thanks to its fast switching speed and low on-resistance (R_DS(on)). Its versatility makes it a popular choice for engineers and designers working on a variety of electronic projects.
Equivalent
The 2N7002NXBKR is an N-channel MOSFET commonly used for switching applications. Equivalent products include:
1. NXP 2N7002,
2. ON Semiconductor 2N7002,
3. Fairchild 2N7002,
4. Vishay 2N7002,
5. Zetex ZXMN2A01FTA.
These equivalents should have similar voltage, current ratings, and package types, ensuring compatibility in most applications. Always verify the specific parameters for your circuit requirements.
1. NXP 2N7002,
2. ON Semiconductor 2N7002,
3. Fairchild 2N7002,
4. Vishay 2N7002,
5. Zetex ZXMN2A01FTA.
These equivalents should have similar voltage, current ratings, and package types, ensuring compatibility in most applications. Always verify the specific parameters for your circuit requirements.
Features
The 2N7002NXBKR is an N-channel MOSFET designed for a variety of applications. Key features include:
1. Type: N-channel MOSFET, suitable for switching and amplification tasks.
2. Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 60V.
3. Current Rating: The device supports a continuous drain current (I_D) of up to 300mA.
4. R_DS(on): Typically around 1.2Ω at V_GS = 10V, indicating low on-state resistance.
5. Gate Threshold Voltage: Ranges from 1V to 2.5V, which facilitates easy driving by microcontrollers or other logic-level circuits.
6. Package: Comes in a small SOT-23 package, ideal for space-constrained applications.
7. Applications: Suitable for switching applications, load switching, signal processing, and other low-power uses.
8. Temperature Range: Operates effectively in a temperature range from -55°C to +150°C.
These features make the 2N7002NXBKR a versatile component for various electronic designs, particularly in low-voltage and low-current applications.
1. Type: N-channel MOSFET, suitable for switching and amplification tasks.
2. Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 60V.
3. Current Rating: The device supports a continuous drain current (I_D) of up to 300mA.
4. R_DS(on): Typically around 1.2Ω at V_GS = 10V, indicating low on-state resistance.
5. Gate Threshold Voltage: Ranges from 1V to 2.5V, which facilitates easy driving by microcontrollers or other logic-level circuits.
6. Package: Comes in a small SOT-23 package, ideal for space-constrained applications.
7. Applications: Suitable for switching applications, load switching, signal processing, and other low-power uses.
8. Temperature Range: Operates effectively in a temperature range from -55°C to +150°C.
These features make the 2N7002NXBKR a versatile component for various electronic designs, particularly in low-voltage and low-current applications.
Pinout
The 2N7002NXBKR is an N-channel MOSFET. It typically comes in a standard SOT-23 package, which has three pins. The pinout and functions for the 2N7002 in a SOT-23 package are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate will allow current to flow between the drain and source if it exceeds the threshold voltage.
2. Source (S): The source pin is the terminal through which current enters the MOSFET when it is in the "on" state.
3. Drain (D): The drain pin is the terminal through which current exits the MOSFET when it is conducting.
The 2N7002 is widely used in low-power switching applications due to its small size and efficient operation.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate will allow current to flow between the drain and source if it exceeds the threshold voltage.
2. Source (S): The source pin is the terminal through which current enters the MOSFET when it is in the "on" state.
3. Drain (D): The drain pin is the terminal through which current exits the MOSFET when it is conducting.
The 2N7002 is widely used in low-power switching applications due to its small size and efficient operation.
Manufacturer
The 2N7002NXBKR is manufactured by ON Semiconductor, now known as onsemi. Onsemi is a leading semiconductor company that designs and manufactures a wide range of electronic components. It is known for producing energy-efficient power and signal management, logic, discrete, and custom devices for various industries, including automotive, industrial, cloud computing, and communications. With a focus on sustainability and efficiency, onsemi plays a significant role in the development of advanced technologies that enable smarter and more efficient electronic products.
Application
The 2N7002NXBKR is a small-signal N-channel MOSFET commonly used in various applications due to its low on-state resistance and fast switching capabilities. Common application areas include:
1. Switching Circuits: Used in DC-DC converters, power management, and motor control.
2. Signal Processing: Useful in amplifiers and signal conditioning circuits.
3. Level Shifting: Valuable in interfacing devices with different voltage levels.
4. Load Switching: Suitable for driving small loads such as LEDs and relays.
5. Logic Level Translation: Facilitates communication between different logic families.
Its compact size and efficiency make it versatile for consumer electronics, automotive, and industrial applications.
1. Switching Circuits: Used in DC-DC converters, power management, and motor control.
2. Signal Processing: Useful in amplifiers and signal conditioning circuits.
3. Level Shifting: Valuable in interfacing devices with different voltage levels.
4. Load Switching: Suitable for driving small loads such as LEDs and relays.
5. Logic Level Translation: Facilitates communication between different logic families.
Its compact size and efficiency make it versatile for consumer electronics, automotive, and industrial applications.
Package
The 2N7002NXBKR is a MOSFET transistor in a small SOT-23 package.
