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2N7002DWH6327XTSA1
+NomenclatureMOSFET 2N-CH 60V 0.3A SOT363
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FabricantTechnologie Infineon
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Pièce fabricant #2N7002DWH6327XTSA1
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Fiche technique 2N7002DWH6327XTSA1 DataSheet
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Spécifications
| Attribut | Valeur |
| Series | OptiMOS™ |
| Part Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 300mA |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 20pF @ 25V |
| Power - Max | 500mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Supplier Device Package | PG-SOT363-PO |
| Base Product Number | 2N7002 |
Présentation
Description
The 2N7002DWH6327XTSA1 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for low-voltage applications. It features a maximum drain-source voltage (V_DS) of 60V, a continuous drain current (I_D) of 400mA, and a low on-resistance (R_DS(on)) of around 0.8 ohms, making it suitable for switching and amplification tasks in electronic circuits.
This MOSFET is commonly used in various applications such as power management, motor control, and signal switching due to its efficiency and fast switching capabilities. The device comes in a compact SOT-23 package, allowing for easy integration into space-constrained designs.
With a gate threshold voltage (V_GS(th)) typically between 0.8V to 3V, it is ideal for driving logic-level voltages. Its robust performance characteristics and versatility make the 2N7002DWH6327XTSA1 a popular choice among engineers for designing reliable electronic systems.
This MOSFET is commonly used in various applications such as power management, motor control, and signal switching due to its efficiency and fast switching capabilities. The device comes in a compact SOT-23 package, allowing for easy integration into space-constrained designs.
With a gate threshold voltage (V_GS(th)) typically between 0.8V to 3V, it is ideal for driving logic-level voltages. Its robust performance characteristics and versatility make the 2N7002DWH6327XTSA1 a popular choice among engineers for designing reliable electronic systems.
Equivalent
The 2N7002DWH6327XTSA1 is an N-channel MOSFET. Equivalent products include the 2N7000, 2N7002, BS170, and SI2302. These MOSFETs have similar specifications in voltage and current handling, making them suitable substitutes in various applications. Always verify the exact requirements for your specific application when selecting a replacement.
Features
The 2N7002DWH6327XTSA1 is a N-channel MOSFET known for its compact size and efficiency. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage of 60V, making it suitable for various applications.
2. Current Rating: Capable of handling a continuous drain current of up to 600mA.
3. Low On-Resistance: Offers a low RDS(on) value, which minimizes power loss and improves efficiency.
4. Fast Switching: Designed for high-speed operation, ideal for switching applications in power management.
5. Package Type: Available in a SOT-23 package, which provides a small footprint for space-constrained applications.
6. Thermal Characteristics: Features a high thermal resistance to enhance reliability in demanding environments.
This MOSFET is commonly used in applications such as load switching, level shifting, and signal amplification.
1. Voltage Rating: Supports a maximum drain-source voltage of 60V, making it suitable for various applications.
2. Current Rating: Capable of handling a continuous drain current of up to 600mA.
3. Low On-Resistance: Offers a low RDS(on) value, which minimizes power loss and improves efficiency.
4. Fast Switching: Designed for high-speed operation, ideal for switching applications in power management.
5. Package Type: Available in a SOT-23 package, which provides a small footprint for space-constrained applications.
6. Thermal Characteristics: Features a high thermal resistance to enhance reliability in demanding environments.
This MOSFET is commonly used in applications such as load switching, level shifting, and signal amplification.
Pinout
The 2N7002DWH6327XTSA1 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a minimum of 4 pins. The pin configuration is as follows:
1. Gate (G): The control terminal that turns the MOSFET on or off.
2. Drain (D): The terminal where current flows out, typically connected to the load.
3. Source (S): The terminal where current enters, usually connected to ground or a lower potential.
The device is commonly used for switching and amplification in various electronic circuits. It features low on-resistance and is suitable for low-voltage applications, making it ideal for power management in digital devices.
For detailed specifications, always refer to the manufacturer's datasheet.
1. Gate (G): The control terminal that turns the MOSFET on or off.
2. Drain (D): The terminal where current flows out, typically connected to the load.
3. Source (S): The terminal where current enters, usually connected to ground or a lower potential.
The device is commonly used for switching and amplification in various electronic circuits. It features low on-resistance and is suitable for low-voltage applications, making it ideal for power management in digital devices.
For detailed specifications, always refer to the manufacturer's datasheet.
Manufacturer
The 2N7002DWH6327XTSA1 is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in discrete, logic, and MOSFET components, offering a broad range of products that are essential for various electronic applications. Founded as a spin-off from NXP Semiconductors, Nexperia is known for its high-quality, reliable semiconductor solutions, focusing on efficiency and performance. The company serves multiple sectors, including automotive, industrial, consumer electronics, and telecommunications, emphasizing innovation and customer-centric approaches in its offerings.
Application
The 2N7002DWH6327XTSA1 is a N-channel MOSFET primarily used in low-voltage, low-current switching applications. Its key application areas include:
1. Switching Regulators: Used in power management circuits to control voltage and current.
2. Signal Switching: Ideal for switching between signals in digital circuits.
3. Load Switching: Can control loads in battery-powered devices or low-power applications.
4. Relay Replacement: Serves as an alternative to mechanical relays in compact designs.
5. LED Drivers: Used in circuits for controlling LED brightness and operation.
Its compact size and efficiency make it suitable for consumer electronics, automotive, and industrial applications.
1. Switching Regulators: Used in power management circuits to control voltage and current.
2. Signal Switching: Ideal for switching between signals in digital circuits.
3. Load Switching: Can control loads in battery-powered devices or low-power applications.
4. Relay Replacement: Serves as an alternative to mechanical relays in compact designs.
5. LED Drivers: Used in circuits for controlling LED brightness and operation.
Its compact size and efficiency make it suitable for consumer electronics, automotive, and industrial applications.
Package
The 2N7002DWH6327XTSA1 is packaged in a SOT-23 form factor. This surface-mount package is designed for compact applications, providing efficient thermal performance and space-saving advantages.
