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2N7002BK,215
+NomenclatureSMALL SIGNAL FIELD-EFFECT TRANSI
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FabricantNXP USA Inc.
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Pièce fabricant #2N7002BK,215
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En stock9289
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Spécifications
| Attribut | Valeur |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 350mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 1.6Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 2.1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.6 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 50 pF @ 10 V |
| Power Dissipation (Max) | 370mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23 |
Présentation
Description
2N7002BK is a small-signal, N‑channel MOSFET used as a logic‑level switch. It’s a RoHS-compliant, surface-mount device (often in SOT‑23) for low-power switching.
Key specs (typical, varies by vendor):
- Vds: 60 V
- Id: ~200 mA (continuous)
- Rds(on): typically 2–5 Ω at Vgs = 4.5 V (max ~7 Ω at lower Vgs or higher temperature)
- Vgs(th): about 0.8–3 V
- Gate charge/input capacitance: low, suitable for microcontroller drive
Main uses:
- Switching small loads with a microcontroller
- Level shifting and general-purpose switching
- Protection and signal-path switching in compact designs
Note: “215” is likely a date/lot code or variant suffix and does not define electrical performance. For exact parameters, consult the manufacturer’s datasheet for the specific 2N7002BK lot.
Key specs (typical, varies by vendor):
- Vds: 60 V
- Id: ~200 mA (continuous)
- Rds(on): typically 2–5 Ω at Vgs = 4.5 V (max ~7 Ω at lower Vgs or higher temperature)
- Vgs(th): about 0.8–3 V
- Gate charge/input capacitance: low, suitable for microcontroller drive
Main uses:
- Switching small loads with a microcontroller
- Level shifting and general-purpose switching
- Protection and signal-path switching in compact designs
Note: “215” is likely a date/lot code or variant suffix and does not define electrical performance. For exact parameters, consult the manufacturer’s datasheet for the specific 2N7002BK lot.
Equivalent
Possible equivalents for 2N7002BK, 215 (60V N‑channel MOSFET in SOT‑23) include:
- 2N7002 (generic – same family, many vendors)
- 2N7002LT1G (ON Semiconductor)
- 2N7002K (NXP/Nexperia)
- BSS138 (50V, 0.2A, common logic‑level MOSFET)
Note: check VDS, ID, and RDS(on) in the datasheets and ensure packaging matches.
- 2N7002 (generic – same family, many vendors)
- 2N7002LT1G (ON Semiconductor)
- 2N7002K (NXP/Nexperia)
- BSS138 (50V, 0.2A, common logic‑level MOSFET)
Note: check VDS, ID, and RDS(on) in the datasheets and ensure packaging matches.
Features
Key features of 2N7002BK (215 lot code may vary):
- N-channel enhancement-mode MOSFET
- VDS: 60 V
- Continuous ID: ~0.2 A (200 mA)
- RDS(on): max ~3 Ω at VGS = 4.5 V (≈5 Ω at VGS = 2.5 V)
- Gate threshold (VGS(th)): ~0.8–3.0 V
- Logic-level gate drive; suitable for TTL/CMOS levels
- Fast switching with low gate charge
- 3-pin surface-mount package (SOT-23)
- Pb-free, halogen-free, RoHS compliant
- Common uses: switching loads, level shifting, general-purpose small-signal switching in portable/consumer electronics
Note: for exact electrical characteristics, consult the specific datasheet for the 2N7002BK variant.
- N-channel enhancement-mode MOSFET
- VDS: 60 V
- Continuous ID: ~0.2 A (200 mA)
- RDS(on): max ~3 Ω at VGS = 4.5 V (≈5 Ω at VGS = 2.5 V)
- Gate threshold (VGS(th)): ~0.8–3.0 V
- Logic-level gate drive; suitable for TTL/CMOS levels
- Fast switching with low gate charge
- 3-pin surface-mount package (SOT-23)
- Pb-free, halogen-free, RoHS compliant
- Common uses: switching loads, level shifting, general-purpose small-signal switching in portable/consumer electronics
Note: for exact electrical characteristics, consult the specific datasheet for the 2N7002BK variant.
Pinout
Pin count: 3 (SOT-23 package).
Function: N-channel enhancement-mode MOSFET used as a low-power switch (gate controlled; typically G=pin1, D=pin2, S=pin3).
Function: N-channel enhancement-mode MOSFET used as a low-power switch (gate controlled; typically G=pin1, D=pin2, S=pin3).
Manufacturer
- Manufacturer: Nexperia.
- What kind of company: A global semiconductor company that specializes in discrete and power devices (MOSFETs, diodes, protection devices, etc.), originally spun off from Philips/NXP and now operating independently.
- What kind of company: A global semiconductor company that specializes in discrete and power devices (MOSFETs, diodes, protection devices, etc.), originally spun off from Philips/NXP and now operating independently.
Application
Applications of 2N7002BK (including -215 variant):
- General-purpose, low-power N-channel MOSFET switch in digital logic and microcontroller circuits
- Level shifting between logic voltages (e.g., 3.3 V to 5 V)
- Low-side switching for small loads (LEDs, sensors, relays, other actuators)
- PWM switching in DC-DC converters and motor controllers
- Signal conditioning and interface tasks in portable/battery-powered electronics
- Suitable for compact SOT-23 design in space-constrained applications
- General-purpose, low-power N-channel MOSFET switch in digital logic and microcontroller circuits
- Level shifting between logic voltages (e.g., 3.3 V to 5 V)
- Low-side switching for small loads (LEDs, sensors, relays, other actuators)
- PWM switching in DC-DC converters and motor controllers
- Signal conditioning and interface tasks in portable/battery-powered electronics
- Suitable for compact SOT-23 design in space-constrained applications
Package
In SOT-23 (3-pin) surface-mount package. The “215” is typically a date/lot code.
