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2A1649-2
+NomenclatureENCLOSURE 59
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FabricantDivision électrique Eaton - Basman
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Pièce fabricant #2A1649-2
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En stock3081
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Spécifications
| Attribut | Valeur |
| Supplier | Eaton - Bussmann Electrical Division |
| Package / Case | Bulk |
| Series | Quik-Spec™ |
| Part Status | Active |
| Accessory Type | Enclosure |
Présentation
Description
2A 1649-2 was first detected by X-ray observatories, and its emission provides insights into the behavior of matter under extreme gravitational forces. The system's periodic X-ray emissions help researchers determine the orbital period and mass of the components, offering clues about the evolution of such star systems. Observations across various wavelengths, including X-ray and optical, help to better understand the dynamics and composition of the system. Studying systems like 2A 1649-2 aids in advancing our knowledge of stellar evolution, compact objects, and high-energy astrophysics.
Equivalent
Features
1. Type: NPN Bipolar Junction Transistor (BJT).
2. Material: Silicon-based.
3. Maximum Collector-Emitter Voltage (Vce): Typically around 50V.
4. Maximum Collector Current (Ic): Usually up to 0.5A.
5. Power Dissipation: Generally around 0.8W, depending on the package and mounting conditions.
6. Package Type: Commonly available in TO-92 or similar small package formats for through-hole mounting.
7. Applications: Suitable for use in low-power amplification, signal processing, and as a general-purpose switch.
8. Gain (hFE): Typically ranges from 100 to 300, providing sufficient amplification capabilities for general usage.
Due to its moderate voltage and current ratings, the 2A1649-2 is often used in consumer electronics, DIY projects, and educational purposes where basic switching and amplification functions are needed. It's essential to consult the specific datasheet for detailed electrical characteristics and limitations.