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1N4448HLP-7
+NomenclatureDIODE GEN PURP 80V 125MA 2DFN
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FabricantLa société diodes
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Pièce fabricant #1N4448HLP-7
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Fiche technique 1N4448HLP-7 DataSheet
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Package 0402 (1006 Metric)
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En stock9909
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Spécifications
| Attribut | Valeur |
| Supplier | Diodes Incorporated |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Current - Average Rectified(Io) | 125mA |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 100 mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4 ns |
| Current - Reverse Leakage @ Vr | 100 nA @ 80 V |
| Capacitance @ Vr F | 3pF @ 0.5V, 1MHz |
| Mounting Type | Surface Mount |
| Supplier Device Package | X1-DFN1006-2 |
Présentation
Description
Equivalent
- 1N4448
- 1N4448A
- 1N4148
- 1N914
- MMBD4148
- LL4148
- 1N4448W (SMD version)
Features
- Fast switching silicon diode for high-speed switching and rectification
- VRRM: 100 V; IF(AV): 200 mA
- Very fast reverse-recovery time (typ. ~3–4 ns)
- Forward voltage ≈ 0.7–1.0 V at rated current
- RoHS-compliant, lead-free HLP SMT package
- Wide operating temperature range (roughly −55°C to +150°C)
- Suitable for high-frequency switching, protection, and pulse rectification in mixed-signal circuits
Pinout
- Function: fast-switching silicon diode (1N4448 family) used for high-speed switching and rectification.
Manufacturer
What kind of company is it? These are semiconductor manufacturers that design and produce electronic components such as diodes, transistors, and integrated circuits. They are typically large global companies (often publicly traded).
Application
- High-speed rectification and switching in digital, RF, and power-supply circuits
- AM demodulation, envelope detection, and peak-detection circuits
- Clipping/limiting and protection networks in op-amp and ADC input stages
- Detector and sampler circuits in instrumentation and test equipment
- Signal routing and logic-level switching where fast recovery is required
Note: Suitable for low-to-moderate current, fast-switching, general-purpose diode needs.